User Manual

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ISSUE 1 - DECEMBER 1999

ZXT11N15DF

SuperSOT4™

15V NPN SILICON LOW SATURATION TRANSISTOR

SUMMARY

CEO

=15V; R

SAT

= 37m ;I

= 3A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

FEATURES

•

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 5A

• I

=3A Continuous Collector Current

• SOT23 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXT11N15DFTA 7 8mm embossed 3000 units

ZXT11N15DFTC 13 8mm embossed 10000 units

DEVICE MARKING

1N5

Top View

SOT23

Summary of content (6 pages)

PAGE 1
ZXT11N15DF SuperSOT4™ 15V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=15V; RSAT = 37m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
PAGE 2
ZXT11N15DF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 5 A Continuous Collector Current IC 3 A Base Current IB 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.
PAGE 3
ZXT11N15DF TYPICAL CHARACTERISTICS IC Collector Current (A) Max Power Dissipation (W) 0.7 0.6 0.5 0.4 0.3 0.1 0 20 40 60 80 100 120 140 160 100ms 10ms 200 175 150 D=0.5 100 Single Pulse D=0.2 50 D=0.05 25 0 100µ D=0.1 1m 10m 100m 1 10 1ms 100µs Single Pulse Tamb=25°C 1 Safe Operating Area 225 Thermal Resistance (°C/W) 1s 10 VCE Collector-Emitter Voltage (V) Derating Curve 75 DC 10m 100m Temperature (°C) 125 1 100m 0.2 0.
PAGE 4
ZXT11N15DF ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. 40 V I C =100␮A V (BR)CEO 15 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.
PAGE 5
ZXT11N15DF TYPICAL CHARACTERISTICS 0.25 Tamb=25°C IC/IB=50 0.15 VCE(SAT) (V) VCE(SAT) (V) 100m 100°C 0.20 25°C 0.10 0.05 -55°C 0.00 1m 10m 100m 1 IC/IB=100 10m IC/IB=50 1m IC/IB=10 1m 10 10m 1.0 25°C -55°C 0.4 0.2 10m 100m 1 10 0.6 100°C -55°C 25°C 0.6 100°C 0.4 100m 100m VBE(SAT) v IC VCE=2V 10m 10m 1 1 IC Collector Current (A) hFE v IC VBE(ON) (V) 25°C 1m IC Collector Current (A) 1m 0.8 0.4 0.0 1m 0.
PAGE 6
ZXT11N15DF PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 N NOM 0.95 0.021 0.0059 NOM 0.075 0.004 0.0985 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.