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ISSUE 1 - DECEMBER 1999

ZXT13N15DE6

SuperSOT4™

15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

CEO

=15V; R

SAT

= 29m ;I

= 5A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

FEATURES

•

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 15A

•

=5A Continuous Collector Current

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXT13N15DE6TA 7 8mm embossed 3000 units

ZXT13N15DE6TC 13 8mm embossed 10000 units

DEVICE MARKING

N15D

Top View

SOT23-6

Summary of content (6 pages)

PAGE 1
ZXT13N15DE6 SuperSOT4™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 29m ; IC= 5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
PAGE 2
ZXT13N15DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 15 A Continuous Collector Current IC 5 A Base Current IB 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.
PAGE 3
ZXT13N15DE6 TYPICAL CHARACTERISTICS Max Power Dissipation (W) IC Collector Current (A) 1.2 10 DC 1 1s 100ms 10ms 1ms 100m 100µs Single Pulse Tamb=25°C 10m 100m 1 10 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) 100 80 D=0.5 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 0.6 0.4 0.2 0.0 0 20 40 60 80 100 Derating Curve 120 40 0.8 Temperature (°C) Safe Operating Area 60 1.
PAGE 4
ZXT13N15DE6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 40 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO Emitter Cut-Off Current UNIT CONDITIONS. 85 V I C =100␮A 15 22 V I C =10mA* 7.5 8.
PAGE 5
ZXT13N15DE6 TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 100°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 0.15 25°C 0.10 0.05 1m -55°C IC/IB=10 1m 10m 100m 1 IC Collector Current (A) 0.00 1m 10 10m VCE(SAT) v IC VCE=2V 1.0 25°C 0.6 0.4 -55°C 0.2 10m 100m 1 10 0.6 100°C -55°C 25°C 100°C 0.4 100m 100m VBE(SAT) v IC VCE=2V 10m 10m 1 1 IC Collector Current (A) hFE v IC VBE(ON) (V) 25°C 1m IC Collector Current (A) 1m 0.8 0.4 0.0 1m 0.
PAGE 6
ZXT13N15DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc.