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ZXTC2063E6

Document Number: DS33648 Rev: 3 - 2

1 of 9

www.diodes.com

November 2012

ZXTC2063E6

ADVANCE INFORMATION

Product Line o

Diodes Incorporated

40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

Features

• NPN + PNP combination

• BV

CEO

> 40 (-40)V

• BV

ECO

> 6 (-3)V

• I

= 9 (-9)A Peak Pulse Current

• V

CE(sat)

< 60 (-90)mV @ 1A

• R

CE(sat)

= 38 (58)mΩ

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Description

Advanced process capability has been used to achieve this high

performance device. Combining NPN and PNP transistors in the

SOT26 package provides a compact solution for the intended

applications.

Mechanical Data

• Case: SOT26

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Applications

• MOSFET and IGBT gate driving

• Motor drive

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC2063E6TA 2063 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

2063 = Product Type Marking Code

Top View

Device S

mbol

SOT26

Top View

Pin-Out

2063

Summary of content (9 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXTC2063E6 ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • • • • • • • • • • • • • NPN + PNP combination BVCEO > 40 (-40)V BVECO > 6 (-3)V ICM = 9 (-9)A Peak Pulse Current VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)mΩ Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
A Product Line of Diodes Incorporated ZXTC2063E6 ADVANCE INFORMATION Maximum Ratings – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Collector Voltage (Reverse blocking) Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current Symbol VCBO VCEO VECO VEBO IC ICM IB Value 130 40 6 7 3.
PAGE 3
A Product Line of Diodes Incorporated ZXTC2063E6 VCE(sat) -IC Collector Current (A) IC Collector Current (A) 10 Limit 1 DC 1s 100ms 100m 10m VCE(sat) 10 Limit 1 DC 1s 100ms 100m 10ms NPN Tamb=25°C 1ms 50mm x 50mm 2oz FR4 One active die 100m 100µs 1 10m 10 0.1 100µs 1 10 -VCE Collector-Emitter Voltage (V) Safe Operating Area 2.0 Tamb=25°C 50mm x 50mm 2oz FR4 One active die D=0.1 D=0.
PAGE 4
A Product Line of Diodes Incorporated ZXTC2063E6 ADVANCE INFORMATION Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 130 40 7 170 63 8.3 ⎯ ⎯ ⎯ V V V Emitter-collector breakdown voltage (reverse blocking) BVECX 6 7.
PAGE 5
A Product Line of Diodes Incorporated ZXTC2063E6 ADVANCE INFORMATION Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO -45 -40 -7 -80 -65 -8.3 ⎯ ⎯ ⎯ V V V Emitter-collector breakdown voltage (reverse blocking) BVECX -6 -7.
PAGE 6
A Product Line of Diodes Incorporated ZXTC2063E6 0.7 1 Tamb=25°C IC/IB=10 0.6 IC/IB=100 0.5 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=50 10m IC/IB=20 IC/IB=10 0.4 150°C 0.3 100°C 25°C 0.2 0.1 -55°C 1m 1m 10m 100m 1 0.0 10m 10 IC Collector Current (A) 1.2 100°C 0.8 25°C 0.6 -55°C 0.4 0.2 0.0 1m 10m 100m 1 IC Collector Current (A) 10 750 675 600 525 450 375 300 225 150 75 0 10 -55°C 1.0 25°C 0.8 0.6 100°C 150°C 0.4 1m hFE v IC 1.
PAGE 7
A Product Line of Diodes Incorporated ZXTC2063E6 0.4 1 Tamb=25°C IC/IB=10 0.3 - VCE(SAT) (V) - VCE(SAT) (V) IC/IB=100 100m IC/IB=50 IC/IB=20 10m 0.2 150°C 100°C 0.1 25°C IC/IB=10 1m 10m 100m -55°C 1 0.0 10m 10 - IC Collector Current (A) 100m VCE(SAT) v IC 500 25°C 400 0.6 300 0.4 -55°C 200 0.2 100 0.0 1m 10m 100m 1 - IC Collector Current (A) 0 10 IC/IB=10 25°C -55°C - VBE(SAT) (V) 600 100°C 1.0 0.8 1.0 700 Typical Gain (hFE) Normalised Gain 1.
PAGE 8
A Product Line of Diodes Incorporated ZXTC2063E6 Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.
PAGE 9
A Product Line of Diodes Incorporated ZXTC2063E6 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).