Instruction Manual

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ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

1 of 9

www.diodes.com

January 2011

Product Line o

Diodes Incorporated

ZXTC6720MC

DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

Features and Benefits

NPN Transistor

• BV

CEO

> 80V

• I

= 3.5A Continuous Collector Current

• Low Saturation Voltage (185mV max @ 1A)

• R

SAT

= 68mΩ for a low equivalent On-Resistance

PNP Transistor

• BV

CEO

> -70V

• I

= -2.5A Continuous Collector Current

• Low Saturation Voltage (-220mV max @ -1A)

• R

SAT

= 117mΩ for a low equivalent On-Resistance

• h

characterized up to -5A for high current gain hold up

• Low profile 0.8mm high package for thin applications

• R

θJA

efficient, 40% lower than SOT26

• 6mm

footprint, 50% smaller than TSOP6 and SOT26

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• Portable applications

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC6720MCTA DE4 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

Equivalent Circuit

Top View

Bottom View

DFN3020B-8

NPN Transistor

PNP Transistor

DE4 = Product type marking code

Top View, Dot Denotes Pin 1

C2 C2 C1 C1

E2 B2 E1 B1

C1C2

Pin 1

Bottom View

Pin Out

DE4

Summary of content (9 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage (185mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -70V • IC = -2.
PAGE 2
A Product Line of Diodes Incorporated ZXTC6720MC Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 4 & 7) (Notes 5 & 7) Base Current IC NPN 100 80 7 5 3.5 4 PNP -70 -70 -7 -3 -2.
PAGE 3
A Product Line of Diodes Incorporated ZXTC6720MC Thermal Characteristics DC 1 1s VCE(SAT) 100ms 10ms 0.1 Limited 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 1ms 100us 1 10 100 -IC Collector Current (A) IC Collector Current (A) 10 1 DC 1s VCE(SAT) 0.1 Limited 100ms 10ms 1ms 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.
PAGE 4
A Product Line of Diodes Incorporated ZXTC6720MC Electrical Characteristics, NPN Transistor (at TA = 25°C unless otherwise specified) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min 100 80 7 - Typ 180 110 8.
PAGE 5
A Product Line of Diodes Incorporated ZXTC6720MC NPN - Typical Electrical Characteristics 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=10 IC/IB=20 10m IC/IB=50 IC/IB=100 1m 1m 10m 100m 1 100°C 0.15 25°C 0.10 -55°C 0.05 0.00 1m 10 IC Collector Current (A) 10m 100°C 450 25°C 360 270 0.6 -55°C 0.4 180 90 0.2 0.0 1m 10m 100m 1.0 0 10 1 VBE(SAT) (V) 540 1.0 0.8 630 Typical Gain (hFE) Normalised Gain 1.2 VCE=2V IC/IB=50 0.8 -55°C 0.
PAGE 6
A Product Line of Diodes Incorporated ZXTC6720MC PNP - Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min -70 -70 -7 - Typ -150 -125 -8.
PAGE 7
A Product Line of Diodes Incorporated ZXTC6720MC PNP - Typical Electrical Characteristics 1 0.4 Tamb=25°C IC/IB=10 - VCE(SAT) (V) 100m IC/IB=20 IC/IB=10 10m 1m - VCE(SAT) (V) 0.3 IC/IB=50 0.2 150°C 100°C 0.1 25°C IC/IB=5 10m 100m 1 -55°C 0.0 10m 10 - IC Collector Current (A) 100m VCE(SAT) v IC VCE(SAT) v IC 150°C VCE=5V 1.0 700 600 100°C 500 400 25°C 300 200 IC/IB=10 25°C -55°C - VBE(SAT) (V) Typical Gain (hFE) 800 1 - IC Collector Current (A) -55°C 0.8 0.6 150°C 0.
PAGE 8
A Product Line of Diodes Incorporated ZXTC6720MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 Z b e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTC6720MC Document number: DS31929 Rev. 3 - 2 Dimensions C G G1 X X1 Y Y1 Y2 8 of 9 www.diodes.
PAGE 9
A Product Line of Diodes Incorporated ZXTC6720MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).