Instruction Manual

ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
2 of 9
www.diodes.com
January 2011
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Diodes Incorporated
ZXTC6720MC
Maximum Ratings @ T
A
= 25°C unless otherwise specified
Parameter Symbol NPN PNP Unit
Collector-Base Voltage
V
CBO
100 -70
V
Collector-Emitter Voltage
V
CEO
80 -70
Emitter-Base Voltage
V
EBO
7 -7
Peak Pulse Current
I
CM
5 -3
A
Continuous Collector Current
(Notes 4 & 7)
I
C
3.5 -2.5
(Notes 5 & 7) 4 -3
Base Current
I
B
1
Thermal Characteristics @ T
A
= 25°C unless otherwise specified
Characteristic Symbol NPN PNP Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
P
D
1.5
12
W
mW/°C
(Notes 5 & 7)
2.45
19.6
(Notes 6 & 7)
1.13
8
(Notes 6 & 8)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
R
θ
JA
83.3
°C/W
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
R
θ
JL
17.1
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).