Instruction Manual

ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
4 of 9
www.diodes.com
January 2011
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Diodes Incorporated
ZXTC6720MC
Electrical Characteristics, NPN Transistor (at T
A
= 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
100 180 - V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
80 110 - V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.2 - V
I
E
= 100µA
Collector Cutoff Current
I
CBO
- - 100 nA
V
CB
= 80V
Emitter Cutoff Current
I
EBO
- - 100 nA
V
EB
= 6V
Collector Emitter Cutoff Current
I
CES
- - 100 nA
V
CE
= 65V
Static Forward Current Transfer Ratio
(Note 10)
h
FE
200
300
110
60
20
-
450
450
170
90
30
10
-
900
-
-
-
-
-
I
C
= 10mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 1.5A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
Collector-Emitter Saturation Voltage
(Note 10)
V
CE(sat)
-
-
-
-
-
15
45
145
160
240
20
60
185
200
340
mV
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 20mA
I
C
= 1.5A, I
B
= 50mA
I
C
= 3.5A, I
B
= 300mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE
(
on
)
- 0.96 1.05 V
I
C
= 3.5A, V
CE
= 2V
Base-Emitter Saturation Voltage (Note 10)
V
BE
(
sat
)
- 1.09 1.175 V
I
C
= 3.5A, I
B
= 300mA
Output Capacitance
C
obo
- 11.5 18 pF
V
CB
= 10V. f = 1MHz
Transition Frequency
f
T
100 160 - MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Turn-on Time
t
on
- 86 - ns
V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 25mA Turn-off Time
t
off
- 1128 - ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.