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ZXTD4591E6

ISSUE 1 - JULY 2000

DEVICE MARKING

4591

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

SUMMARY

NPN: V

CEO

=60V; I

= 1A; h

=100-300

PNP: V

CEO

=-60V; I

= -1A; h

=100-300

DESCRIPTION

Complementary NPN and PNP medium power transistors packaged in the 6

lead SOT23 package.

FEATURES

•

Low Equivalent On Resistance - NPN R

CE(sat)

210mΩ at 1A

- PNP R

CE(sat)

355mΩ at -1A

•

Low Saturation Voltage

• h

characterised up to 2A

• I

=1A Continuous Collector Current

• SOT23-6 package

APPLICATIONS

• MOSFET gate driver

• Low Power Motor Drive

•

Low Power DC-DC Converters

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXTD4591E6TA 7 8mm embossed 3000 units

ZXTD4591E6TC 13 8mm embossed 10000 units

Top View

SOT23-6

4591

Summary of content (7 pages)

PAGE 1
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package.
PAGE 2
ZXTD4591E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage LIMIT NPN LIMIT PNP UNIT 80 -80 V V CEO 60 -60 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 2 -2 A Continuous Collector Current IC 1 -1 A Base Current IB 500 -500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 1.7 13.
PAGE 3
ZXTD4591E6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS.
PAGE 4
ZXTD4591E6 NPN ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS.
PAGE 5
ZXTD4591E6 NPN TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C IC/IB=10 0.5 0.5 0.4 0.4 -55 ° C +25 ° C +100 ° C IC/IB=10 CE(sat) -(V) 0.3 0.2 0.2 0.1 0.1 0 0 1mA 300 10mA 1A 100mA 10A 10mA 1mA 100mA IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 1.4 VCE=5V 1A 10A IC/IB=10 1.2 +100 ° C 240 1.0 0.8 +25 ° C - (V) 180 BE(sat) 120 FE h -55 ° C 0.6 -55 °C +25 ° C 0.4 +100 ° C V - Typical Gain 0.3 V V CE(sat) -(V) IC/IB=50 60 0.
PAGE 6
ZXTD4591E6 PNP TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C IC/IB=10 0.5 VCE(sat) -(V) VCE(sat) -(V) 0.5 0.4 0.3 IC/IB=10 IC/IB=50 0.2 0.4 0.3 -55 °C +25 °C +100 °C 0.2 0.1 0.1 0 0 1mA 400 10mA 1A 100mA 10A 10mA 1mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=5V 10A IC/IB=10 1.0 hFE - Typical Gain VBE(sat) - (V) +100 °C 300 +25 °C 200 100 -55 °C 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.
PAGE 7
ZXTD4591E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc.