Manual

ManualsBrandsDiodes ManualsHardwareZXTD6717E6

ZXTD6717E6

ISSUE 2 - JULY 2001

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS

SUMMARY

NPN: V

CEO

=15V; V

CE(sat)

=0.1V; I

= 1.5A;

PNP: V

CEO

=-12V; V

CE(sat)

=-0.175V; I

= -1.25A;

DESCRIPTION

This new combination device comprises a complementary NPN and PNP low

saturation transistor housed in the SOT23-6 package. Users benefit from very

efficient performance combining a high current operation, exceptionally low

CE(sat)

and high H

resulting in extremely low on state losses. This dual transistor

is ideal for use in a variety of efficient driving functions including motors, lamps,

relays and solenoids and will also benefit circuits requiring high output current switching.

FEATURES

•

Low Saturation Voltage

•

CE(sat)

values NPN =135mΩ at 1.5A

- PNP =150mΩ at 1.25A

• h

min 200 at 1A

• I

=1.5A Continuous (NPN), 1.25A (PNP)

• SOT23-6 package with P

= 1.1W

APPLICATIONS

• Various driving functions

Lamps

Motors

Relays and solenoids

•

High output current switches

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXTD6717E6TA 7 8mm embossed 3000 units

ZXTD6717E6TC 13 8mm embossed 10000 units

DEVICE MARKING

6717

Top View

SOT23-6

Summary of content (7 pages)

PAGE 1
ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally low VCE(sat) and high HFE resulting in extremely low on state losses.
PAGE 2
ZXTD6717E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage LIMIT NPN LIMIT PNP UNIT 15 -12 V V CEO 15 -12 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 5 -3 A Continuous Collector Current IC 1.5 -1.25 A Base Current IB 200 -200 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 1.7 13.
PAGE 3
ZXTD6717E6 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS.
PAGE 4
ZXTD6717E6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS.
PAGE 5
ZXTD6717E6 NPN TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB =50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0.1 0 -55°C +25°C +100°C +150°C 0.2 1m 10m 100m 1 0 10 10m 1m IC - Collector Current (A) VCE(sat) v IC 800 100m 1 10 IC - Collector Current (A) VCE(sat) v IC V CE =2V IC/IB =50 600 +100°C VBE(sat) - (V) hFE - Typical Gain 1.0 +25°C 400 -55°C 200 0.75 0.5 0 0 1m -55°C +25°C +100°C +150°C 0.
PAGE 6
ZXTD6717E6 PNP TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB =50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 800 1.0 +100°C 400 +25°C 200 -55°C 0 0.6 -55°C +25°C +100°C +150°C 0.4 0 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 0.
PAGE 7
ZXTD6717E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc.