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Issue 1 - February 2007 1 www.zetex.com

ZXTN19020CFF

20V, SOT23F, NPN high gain power transistor

Summary

CEX

> 65V

CEO

> 20V

ECO

> 4.5V

C(cont)

= 7A

CE(sat)

< 30mV @ 1A

CE(sat)

= 18m⍀

= 1.5W

Complementary part number ZXTP19020CFF

Description

Advanced process capability has been used to maximize the performance

of this transistor. The SOT23F package is compatible with the industry

standard SOT23 footprint but offers lower profile and higher dissipation

for applications where power density is of utmost importance.

Features

• Very low saturation voltage

•High gain

• High forward blocking voltage

• Low profile high dissipation package

Applications

• MOSFET and IGBT gate driving

• LED driving

•Strobe flash

• Motor drive

•Micro buffers

Ordering information

Device marking

1E2

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTN19020CFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTN19020CFF 20V, SOT23F, NPN high gain power transistor Summary BVCEX > 65V BVCEO > 20V BVECO > 4.5V IC(cont) = 7A VCE(sat) < 30mV @ 1A RCE(sat) = 18m⍀ PD = 1.5W Complementary part number ZXTP19020CFF C Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
PAGE 2
ZXTN19020CFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 65 V Collector-emitter voltage (forward blocking) VCEX 65 V Collector-emitter voltage (base open) VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 4.5 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 7 A Base current IB 1 A Peak pulse current ICM 15 A Power dissipation at Tamb =25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.5 W 12.
PAGE 4
ZXTN19020CFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 65 85 V IC = 100␮A Collector-emitter breakdown voltage (forward blocking) BVCEX 65 85 V IC = 100␮A, RBE < 1k⍀ or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 20 25 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100␮A Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8.
PAGE 7
ZXTN19020CFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.
PAGE 8
ZXTN19020CFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.