Instruction Manual

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Issue 1 - February 2007 1 www.zetex.com

ZXTN19020DFF

20V, SOT23F, NPN high gain power transistor

Summary

CEX

> 70V

CEO

> 20V

ECO

> 4.5V

C(cont)

= 6.5A

CE(sat)

= < 30mV @ 1A

CE(sat)

= 18m⍀

= 1.5W

Complementary part number ZXTP19020DFF

Description

Advanced process capability has been used to maximize the

performance of this transistor. The SOT23F package is compatible with

the industry standard SOT23 footprint but offers lower profile and

higher dissipation for applications where power density is of utmost

importance.

Features

• Very low saturation voltage

•High gain

• High forward blocking voltage

• Low profile high dissipation package

Applications

• MOSFET and IGBT gate driving

• LED driving

•Strobe flash

• Motor drive

•Micro buffers

Ordering information

Device marking

1E3

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTN19020DFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTN19020DFF 20V, SOT23F, NPN high gain power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC(cont) = 6.5A VCE(sat) = < 30mV @ 1A RCE(sat) = 18m⍀ PD = 1.5W Complementary part number ZXTP19020DFF Description C Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
PAGE 2
ZXTN19020DFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 70 V Collector-emitter voltage (forward blocking) VCEX 70 V Collector-emitter voltage (base open) VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 4.5 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 6.5 A Base current IB 1 A Peak pulse current ICM 20 A Power dissipation at Tamb =25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.5 W 12.
PAGE 4
ZXTN19020DFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEX voltage (forward blocking) 70 100 V IC = 100␮A 70 100 V IC = 100␮A, RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 20 30 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.
PAGE 7
ZXTN19020DFF Package outline - SOT23F c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.
PAGE 8
ZXTN19020DFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.