Instruction Manual

ZXTN19020DFF
Issue 1 - February 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BV
CBO
70 100 V I
C
= 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
70 100 V I
C
= 100␮A, R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
20 30 V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Emitter-base breakdown voltage BV
EBO
78.4 VI
E
= 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
68.4 VI
E
= 100␮A, R
BC
ⱕ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5 5.7 V I
E
= 100␮A,
Collector-base cut-off current I
CBO
<1 50
20
nA
␮A
V
CB
= 56V
V
CB
= 56V, T
amb
= 100°C
Collector-emitter cut-off current I
CEX
-100nAV
CE
= 56V, R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
25 30 mV
I
C
= 1A, I
B
= 100mA
(*)
45 65 mV
I
C
= 1A, I
B
= 10mA
(*)
70 95 mV
I
C
= 2A, I
B
= 20mA
(*)
55 75 mV
I
C
= 2A, I
B
= 40mA
(*)
140 190 mV
I
C
= 6.5A, I
B
= 180mA
(*)
Base-emitter saturation voltage V
BE(sat)
940 1050 mV
I
C
= 6.5A, I
B
= 180mA
(*)
Base-emitter turn-on voltage V
BE(on)
830 950 mV
I
C
= 6.5A, V
CE
= 2V
(*)
Static forward current transfer
ratio
h
FE
300 450 900
I
C
= 0.1A, V
CE
= 2V
(*)
260 420
I
C
= 2A, V
CE
= 2V
(*)
160 270
I
C
= 6.5A, V
CE
= 2V
(*)
50 80
I
C
= 15A, V
CE
= 2V
(*)
Transition frequency f
T
160 MHz I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Input capacitance C
ibo
297 pF
V
EB
= 0.5V, f = 1MHz
(*)
Output capacitance C
obo
32.6 40 pF
V
CB
= 10V, f = 1MHz
(*)
Delay time t
d
129 ns V
CC
= 10V.
I
C
= 1A,
I
B1
= -I
B2
= 10mA.
Rise time t
r
96 ns
Storage time t
s
398 ns
Fall time t
f
90 ns