Instruction Manual

ZXTN2040F
Document number: DS33668 Rev. 3 - 2
3 of 6
www.diodes.com
August 2012
© Diodes Incorporated
ZXTN2040F
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
40 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
(base open) (Note 8)
BV
CEO
40 — — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
6 — — V
I
E
= 100µA
Collector-emitter cut-off current
I
CES
— — 100 nA
V
CE
= 30V
Collector-base Cut-off Current
I
CBO
— — 100 nA
V
CB
= 30V
Emitter-base Cut-off Current
I
EBO
— — 100 nA
V
EB
= 5V
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio
h
FE
300
300
200
35
—
—
900
—
—
—
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
— —
200
300
500
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE(sat)
— — 1.1 V
I
C
= 1A, I
B
= 100mA
Base-Emitter On Voltage
V
BE(on)
— — 1.0 V
I
C
= 1A, V
CE
= 5V
SMALL SIGNAL CHARACTERISTICS (Note 8)
Transition Frequency
f
T
150 — — MHz
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
Output Capacitance
C
obo
— — 10 pF
V
CB
= 10V, f = 1MHz
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%