User guide

ZXTN25015DFH
Issue 1 - May 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown
voltage
BV
CEO
15 22 V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
ⱕ 300␮s; duty cycle ⱕ 2%.
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECX
68 VI
E
= 100␮A, R
BC
< 1k⍀
or
0.25v > V
BC
> -0.25V
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECO
4.5 5.3 V I
E
= 100␮A,
Emitter-base breakdown voltage BV
EBO
78.2 VI
E
= 100␮A
Collector cut-off current I
CBO
<1 50
20
nA
␮A
V
CB
= 40V
V
CB
= 40V, T
amb
= 100°C
Collector-emitter cut-off current I
CEX
-100nAV
CE
= 30V; R
BE
< 1k⍀
or
-1V < V
BE
< 0.25V
Emitter cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
30 40 mV
I
C
= 1A, I
B
= 100mA
(*)
60 80 mV
I
C
= 1A, I
B
= 10mA
(*)
90 125 mV
I
C
= 2A, I
B
= 20mA
(*)
125 155 mV
I
C
= 5A, I
B
= 500mA
(*)
160 215 mV
I
C
= 5A, I
B
= 100mA
(*)
Base-emitter saturation voltage V
BE(sat)
990 1090 mV
I
C
= 5A, I
B
= 500mA
(*)
Base-emitter turn-on voltage V
BE(on)
805 900 mV
I
C
= 5A, V
CE
= 2V
(*)
Static forward current transfer
ratio
h
FE
300 450 900
I
C
= 10mA, V
CE
= 2V
(*)
300 400
I
C
= 2A, V
CE
= 2V
(*)
150 275
I
C
= 5A, V
CE
= 2V
(*)
25 40
I
C
= 15A, V
CE
= 2V
(*)
Transition frequency f
T
150 240 MHz I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Output capacitance C
OBO
22.7 30 pF
V
CB
= 10V, f = 1MHz
(*)
Delay time t
(d)
16 ns V
CC
= 10V. I
C
= 3A, I
B1
=
I
B2
= 50mA.
Rise time t
(r)
41 ns
Storage time t
(s)
148 ns
Fall time t
(f)
23 ns