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Issue 1 - May 2006 1 www.zetex.com

ZXTN25020BFH

20V, SOT23, NPN medium power transistor

Summary

CEX

> 50V

CEO

> 20V

ECO

> 3V

C(cont)

= 4.5A

CE(sat)

< 45 mV @ 1A

CE(sat)

= 27 m⍀

= 1.25W

Complementary part number ZXTP25020BFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 50V forward blocking voltage

• 3V reverse blocking voltage

Applications

• MOSFET gate drivers

• Motor control

• DC-DC converters

Ordering information

Device marking

1B1

Device Reel size

(inches)

Tape width

(mm)

Quantity per

reel

ZXTN25020BFHTA 7 8 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m⍀ PD = 1.25W Complementary part number ZXTP25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTN25020BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 50 V Collector-emitter voltage (forward blocking) VCEX 50 V Collector-emitter voltage VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 3 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 4.5 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.
PAGE 4
ZXTN25020BFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Symbol BVCBO Min. 50 Typ. 90 BVCEX 50 90 Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) BVCEO 20 27 V IC = 10mA (*) BVEBO 7 8 V IE = 100␮A BVECX 6 7 V IE = 100␮A, RBC < 1k⍀ or 0.25V > VBC > -0.
PAGE 6
ZXTN25020BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.