Manual

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Issue 1 - June 2006 1 www.zetex.com

ZXTN25020CFH

20V, SOT23, NPN medium power transistor

Summary

CEX

> 70V

CEO

> 20V

ECO

> 5V

C(cont)

= 4.5A

CE(sat)

< 45 mV @ 1A

CE(sat)

= 28 m⍀

= 1.25W

Complementary part number ZXTP25020CFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

•High gain

• Low saturation voltage

• 70V forward blocking voltage

• 5V reverse blocking voltage

Applications

• MOSFET gate drivers

• Power switches

• Motor control

•DC fans

• DC-DC converters

Ordering information

Device marking

1B3

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTN25020CFHTA 7 8 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m⍀ PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTN25020CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 70 V Collector-emitter voltage (forward blocking) VCEX 70 V Collector-emitter voltage VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 5 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 4.5 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.
PAGE 4
ZXTN25020CFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 70 100 Collector-emitter breakdown BVCEX voltage (forward blocking) 70 100 Collector-emitter breakdown BVCEO voltage (base open) 20 35 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100␮A Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8.0 V IE = 100␮A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.
PAGE 6
ZXTN25020CFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.