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Issue 2 - May 2006 1 www.zetex.com

ZXTN25020DFH

20V SOT23 NPN medium power transistor

Summary

CEX

> 100V; BV

(BR)CEO

> 20V

ECO

> 5V;

C(CONT)

= 4.5A

CE(sat)

= 28 m⍀ typical

CE(sat)

< 43 mV @ 1A;

= 1.25W

Complementary part number ZXTP25020DFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• Higher power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 100V forward blocking voltage

• 5V reverse blocking voltage

Applications

•DC - DC converters

• MOSFET and IGBT gate driving

• LED driver

• Motor drive

• Relay, lamp and solenoid drive

Ordering information

Device marking

016

Device Reel size

(inches)

Tape width Quantity per reel

ZXTN25020DFHTA 7 8mm 3000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV(BR)CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTN25020DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 100 V Collector-emitter voltage (forward blocking) VCEX 100 V Collector-emitter voltage VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 5 V Emitter-base voltage VEBO 7 V Continuous collector current (c) IC 4.5 A Base current IB 1 A Peak pulse current ICM 15 A Power dissipation at TA =25°C (a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.
PAGE 4
ZXTN25020DFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Symbol Min. Collector emitter breakdown voltage (base open) BVCEO 20 35 V IC = 10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8 V IE = 100␮A, RBC < 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 5 6 V IE = 100mA, Emitter base breakdown voltage BVEBO Collector cut-off current ICBO 7 8.
PAGE 6
ZXTN25020DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.