Owner's manual

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Issue 3 - September 2006 1 www.zetex.com

ZXTN25050DFH

50V, SOT23, NPN medium power transistor

Summary

CEX

> 150V

CEO

> 50V

ECO

> 5V

C(cont)

= 4A

CE(sat)

< 60mV @ 1A

CE(sat)

= 40m⍀

= 1.25W

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

•High gain

• Low saturation voltage

• 150V forward blocking voltage

• 5V reverse blocking voltage

Applications

• MOSFET gate drivers

• Power switches

• Motor control

•DC fans

• DC-DC converters

Ordering information

Device marking

017

Device Reel size

(inches)

Tape width

(mm)

Quantity per

reel

ZXTN25050DFHTA 7 8 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTN25050DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 150 V Collector-emitter voltage (forward blocking) VCEX 150 V Collector-emitter voltage VCEO 50 V Emitter-collector voltage (reverse blocking) VECO 5 V Emitter-base voltage VEBO 7 V Continuous collector current (c) IC 4 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C (a) Linear derating factor PD 0.73 5.
PAGE 4
ZXTN25050DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Min. Typ. Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEX voltage (forward blocking) Symbol 150 180 Max. Unit Conditions V IC = 100␮A 150 180 V IC = 100␮A, RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 50 67 V IC = 10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX 5 8 V IE = 100␮A, RBC ⱕ 1k⍀ or 0.
PAGE 6
ZXTN25050DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.