Owner's manual

ZXTN25050DFH
Issue 3 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BV
CBO
150 180 V I
C
= 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150 180 V I
C
= 100␮A, R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
50 67 V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
ⱕ 300␮s; duty cycle ⱕ 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
58 VI
E
= 100␮A, R
BC
ⱕ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
57.4 VI
E
= 100␮A,
Emitter-base breakdown
voltage
BV
EBO
78.3 VI
E
= 100␮A
Collector cut-off current I
CBO
<1 50
20
nA
␮A
V
CB
= 150V
V
CB
= 150V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-100nAV
CE
= 150V; R
BE
ⱕ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
50 60 mV
I
C
= 1A, I
B
= 100mA
(*)
160 260 mV
I
C
= 1A, I
B
= 10mA
(*)
180 250 mV
I
C
= 2A, I
B
= 40mA
(*)
190 235 mV
I
C
= 3,5A, I
B
= 175mA
(*)
160 210 mV
I
C
= 4A, I
B
= 400mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
970 1070 mV
I
C
= 4A, I
B
= 400mA
(*)
Base-emitter turn-on voltage V
BE(on)
870 970 mV
I
C
= 4A, V
CE
= 2V
(*)
Static forward current transfer
ratio
h
FE
300 450 900
I
C
= 10mA, V
CE
= 2V
(*)
240 410
I
C
= 1A, V
CE
= 2V
(*)
20 40
I
C
= 4A, V
CE
= 2V
(*)
Transition frequency f
T
200 MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance C
OBO
12 20 pF
V
CB
= 10V, f = 1MHz
(*)
Delay time t
(d)
65 ns V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time t
(r)
111 ns
Storage time t
(s)
429 ns
Fall time t
(f)
140 ns