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Issue 1 - March 2006 1 www.zetex.com

ZXTN25060BFH

60V, SOT23, NPN medium power transistor

Summary

CEX

> 150V

CEO

> 60V

ECO

> 6V

C(cont)

= 3.5A

CE(sat)

< 65 mV @ 1A

CE(sat)

= 43 m⍀

= 1.25W

Complementary part number ZXTP25060BFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 150V forward blocking voltage

Applications

• Lamp, relay and solenoid drivers

• General switching in automotive and industrial applications

• Motor drive and control

Ordering information

Device marking

019

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTN25060BFHTA 7 8 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m⍀ PD = 1.25W Complementary part number ZXTP25060BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTN25060BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 150 V Collector-emitter voltage (forward blocking) VCEX 150 V Collector-emitter voltage VCEO 60 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V IC 3.5 A Peak pulse current ICM 10 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.73 W 5.84 mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.05 W 8.
PAGE 4
ZXTN25060BFH ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 150 190 Collector-emitter breakdown voltage (forward blocking) BVCEX 150 190 Collector-emitter breakdown voltage (base open) BVCEO 60 80 V IC = 10mA (*) Emitter-collector BVECX breakdown voltage (reverse blocking) 6 8 V IE = 100␮A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.
PAGE 6
ZXTN25060BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.