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ZXTN649F

Document number: DS31900 Rev. 3 - 2

1 of 7

www.diodes.com

January 2013

Product Line o

Diodes Incorporated

ZXTN649F

25V NPN LOW SATURATION TRANSISTOR IN SOT23

Features

• BV

CEO

> 25V

• BV

CBO

> 35V forward blocking voltage

• I

= 3A high Continuous Collector Current

• Low saturation voltage, V

CE(SAT)

< 120mV @1A

• R

CE(SAT)

= 77mΩ for a low equivalent On-Resistance

• 725mW Power dissipation

• h

specified up to 6A for high current gain hold up

• Complementary PNP Type: ZXTP749F

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight 0.008 grams (approximate)

Applications

• MOSFET gate drivers

• Power switching in automotive and industrial applications

• Motor drive and control

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN649FTA 1N7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

SOT23

Top View

Pin-Out

Top View Device Symbol

1N7 = Product type Marking Code

Summary of content (7 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 25V BVCBO > 35V forward blocking voltage IC = 3A high Continuous Collector Current Low saturation voltage, VCE(SAT) < 120mV @1A RCE(SAT) = 77mΩ for a low equivalent On-Resistance 725mW Power dissipation hFE specified up to 6A for high current gain hold up Complementary PNP Type: ZXTP749F Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen
PAGE 2
A Product Line of Diodes Incorporated ZXTN649F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 35 25 7 3 6 500 Unit V V V A A mA Value 725 172 79 -55 to +150 Unit mW °C/W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
A Product Line of Diodes Incorporated ZXTN649F 0.8 10 VCE(sat) Max Power Dissipation (W) IC Collector Current (A) Thermal Characteristics and Derating information Limited 1 DC 1s 100ms 100m 10ms Single Pulse T amb=25°C 10m 100m 1ms 100µs 1 10 VCE Collector-Emitter Voltage (V) 0.6 0.4 0.2 0.0 0 20 Safe Operating Area 160 120 100 D=0.5 80 40 80 100 120 140 160 T amb=25°C 140 60 60 Temperature (°C) Derating Curve Maximum Power (W) Thermal Resistance (°C/W) 180 40 D=0.
PAGE 4
A Product Line of Diodes Incorporated ZXTN649F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min 35 25 7 Typ 110 35 8.
PAGE 5
A Product Line of Diodes Incorporated ZXTN649F Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 Tamb=25°C IC/IB=10 0.3 IC/IB=100 IC/IB=50 150°C 10m VCE(sat) (V) VCE(sat) (V) 100m IC/IB=10 IC/IB=20 0.2 100°C 0.1 25°C -55°C 1m 1m 10m 100m 0.0 10m 1 IC Collector Current (A) 100m 1 IC Collector Current (A) VCE(sat) v IC VCE(sat) v IC 300 200 IC/IB=10 150°C 1.0 100°C VBE(sat) (V) Typical Gain (hFE) 1.
PAGE 6
A Product Line of Diodes Incorporated ZXTN649F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M K1 D F J L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.
PAGE 7
A Product Line of Diodes Incorporated ZXTN649F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).