Manual

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Issue 2 - June 2007 1 www.zetex.com

ZXTP07012EFF

12V, SOT23F, PNP medium power transistor

Summary;

CEO

> -12V

C(cont)

= -4A

CE(sat)

< -75mV @ 1A

CE(sat)

= 50m⍀

= 1.5W

Complementary part number ZXTN07012EFF

Description

This low voltage PNP transistor has been designed for applications

requiring high gain and very low saturation voltage. The SOT23F

package is pin compatible with the industry standard SOT23 footprint

but offers lower profile and higher dissipation for applications where

power density is of utmost importance.

Features

• Low profile SOT23F package

• Low saturation voltage

•High gain

• High power dissipation

Applications

• Load switches

• Battery charging

• Motor drive

Ordering information

Device marking

1D1

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP07012EFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC(cont) = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
PAGE 2
ZXTP07012EFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -12 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -7 V IC -4 A ICM -8 A IB -1 A 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.50 W 12.0 mW/°C 2.0 W PD 16.
PAGE 4
ZXTP07012EFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -12 Collector-emitter breakdown voltage (base open) BVCEO Emitter-base breakdown voltage BVEBO Unit Conditions -23 V IC = -100␮A -12 -16 V IC = -10mA (*) * -7 -8.4 V IE = -100␮A -50 nA VCB = -10V -20 ␮A VCB = -10V, Tamb= 100°C <-1 Collector-base cut-off current ICBO Max. Emitter-base cut-off current IEBO <-1 -50 nA VEB = -5.
PAGE 7
ZXTP07012EFF Package outline - SOT23F c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.
PAGE 8
ZXTP07012EFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.