Manual

ManualsBrandsDiodes ManualsHardwareZXTP08400BFF

Issue 2 - August 2007 1 www.zetex.com

ZXTP08400BFF

400V, SOT23F, PNP medium power high voltage transistor

Summary;

CEO

> -400V

ECO

> -6V

C(cont)

= -0.2A

CE(sat)

< 220mV @ 100mA

= 1.5W

Complementary part number ZXTN08400BFF

Description

This PNP transistor has been designed for applications requiring high

blocking voltage. The SOT23F package is pin compatible with the

industry standard SOT23 footprint but offers lower profile and higher

dissipation for applications where power density is of utmost

importance.

Features

• High voltage

• Low saturation voltage

Applications

• Telecoms switching

Ordering information

Device marking

1D6

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP08400BFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC(cont) = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high blocking voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
PAGE 2
ZXTP08400BFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-collector voltage (reverse blocking) VECO -6 V Emitter-base voltage VEBO -7 V IC -0.2 A ICM -1 A IB -0.2 A 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.50 W 12.0 mW/°C 2.0 W PD 16.
PAGE 4
ZXTP08400BFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -400 -500 V IC = -100␮A Collector-emitter breakdown voltage (base open) BVCEO -400 -480 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.1 V IE = -100␮A Emitter-collector breakdown voltage (reverse blocking) BVECX -6 -8.2 V IE = -100␮A, RBC < 1k⍀ or 0.25V > VBC > -0.
PAGE 6
ZXTP08400BFF Package outline - SOT23F c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Min. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 L 0.48 0.68 0.0189 0.0268 0.20 0.0043 0.0079 L1 0.30 0.50 0.0153 0.0161 3.00 0.1102 0.1181 R 0.05 0.15 0.0019 0.
PAGE 8
ZXTP08400BFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.