User Manual

ManualsBrandsDiodes ManualsHardwareZXTP19020CFF

Issue 1 - February 2007 1 www.zetex.com

ZXTP19020CFF

20V, SOT23F, PNP medium power transistor

Summary:

CEO

> -20V

ECO

> -5V

C(cont)

= -5A

CE(sat)

< 40mV @ 100mA

CE(sat)

= 21m⍀

= 1.5W

Complementary part number ZXTN19020CFF

Description

Advanced process capability has been used to maximize the

performance of this transistor. The SOT23F package is compatible with

the industry standard SOT23 footprint but offers lower profile and

higher dissipation for applications where power density is of utmost

importance.

Features

•High gain

• Low saturation voltage

• Low profile high dissipation package

Applications

• Battery charging

• Load switch

• DC-DC converters

Ordering information

Device marking

1D7

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP19020CFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC(cont) = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
PAGE 2
ZXTP19020CFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -5 V Emitter-base voltage VEBO -7 V IC -5 A ICM -10 A Base current IB -1 A Power dissipation at Tamb =25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.5 W 12.0 mW/°C 2.0 W 16.
PAGE 4
ZXTP19020CFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) BVCBO -25 -45 V IC = -100␮A BVCEO -20 -30 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.3 V IE = -100␮A Emitter-collector breakdown voltage (reverse blocking) BVECX -6 -8.3 V IE = -100␮A, RBC ⱕ1k⍀ or 0.25V < VBC < -0.
PAGE 7
ZXTP19020CFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.
PAGE 8
ZXTP19020CFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.