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Issue 1 - September 2007 1 www.zetex.com

ZXTP19020DFF

20V, SOT23F, PNP medium power transistor

Summary

CEO

> -20V

ECO

> -4V

C(cont)

= 5.5A

CE(sat)

< 44mV @ 1A

CE(sat)

= 26mΩ

= 1.5W

Complementary part number: ZXTN19020DFF

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium

Features

• High power dissipation SOT23 package

• 15A peak current

• Guaranteed gain at a collector current of 10A

• Very low saturation voltage

Applications

• MOSFET and IGBT gate driving

• Power switches

• Motor control

Ordering information

Device marking

1D8

Device Reel size

(inches)

Tape width Quantity per

reel

ZXTP19020DFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.
PAGE 2
ZXTP19020DFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -4 V Emitter-base voltage VEBO -7 V IC -5.5 A ICM -15 A Base current IB -1 A Power dissipation at Tamb = 25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.5 W 12 mW/°C 2 W 16 mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit Junction to ambient(a) R JA 149.
PAGE 4
ZXTP19020DFF Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -25 Collector-emitter breakdown voltage (base open) BVCEO Emitter-collector breakdown voltage (reverse blocking) Max. Unit Conditions -55 V IC = -100 A -20 -50 V IC = -10mA (*) BVECX -4 -8.6 V IE = -100 A, RBC < 1kΩ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO -4 -8.
PAGE 6
ZXTP19020DFF SOT23F Package outline c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Min. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 L 0.48 0.68 0.0189 0.0268 0.20 0.0043 0.0079 L1 0.30 0.50 0.0153 0.0161 3.00 0.1102 0.1181 R 0.05 0.15 0.0019 0.
PAGE 8
ZXTP19020DFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.