Owner's manual

ZXTP19020DFF
Issue 1 - September 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
CBO
-25 -55 V I
C
= -100A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-20 -50 V
I
C
= -10mA
(*)
NOTES:
(*)Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
-4 -8.6 V I
E
= -100  A, R
BC
< 1k Ω or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
-4 -8.6 V I
E
= -100A
Emitter-base breakdown
voltage
BV
EBO
-7 -8.2 V I
E
= -100A
Collector-base cut-off current I
CBO
<-1 -50
-0.5
nA
A
V
CB
= -25V
V
CB
= -25V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-37 -44 mV
I
C
= -1A, I
B
= -100mA
(*)
-90 -125 mV
I
C
= -1A, I
B
= -10mA
(*)
-105 -140 mV
I
C
= -2A, I
B
= -40mA
(*)
-160 -210 mV
I
C
= -5A, I
B
= -250mA
(*)
-145 -175 mV
I
C
= -5.5A, I
B
= -550mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-975 -1050 mV
I
C
= -5.5A, I
B
= -550mA
(*)
Base-emitter turn-on voltage V
BE(on)
-830 -900 mV
I
C
= -5.5A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
300 450 900
I
C
= -100mA, V
CE
= -2V
(*)
200 310
I
C
= -2A, V
CE
= -2V
(*)
85 130
I
C
= -5.5A, V
CE
= -2V
(*)
25 50
I
C
= -10A, V
CE
= -2V
(*)
20
I
C
= -15A, V
CE
= -2V
(*)
Transition frequency f
T
176 MHz I
C
= -50mA, V
CE
= -10V
f
= 50MHz
Input capacitance C
ibo
400 pF
V
EB
= -0.5V, f = 1MHz
(*)
Output capacitance C
obo
36 45 pF
V
CB
= -10V, f = 1MHz
(*)
Delay time t
d
23 ns I
C
= -1A, V
CC
= -10V
I
B1
= -I
B2
= -50mA.
Rise time t
r
18.4 ns
Storage time t
s
266 ns
Fall time t
f
49.6 ns