Manual

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Issue 1 - October 2007 1 www.zetex.com

ZXTP19100CFF

100V, SOT23F, PNP medium power transistor

Summary

CEO

> -100V

ECO

> -7V

C(cont)

= -2A

CE(sat)

< 120mV @ 1A

CE(sat)

= 95m⍀

= 1.5W

Complementary part number: ZXTN19100CFF

Description

Packaged in the SOT23 outline this new low saturation 100V PNP

transistor offers extremely low on state losses making it ideal for use in

DC-DC circuits and various driving and power management functions.

Features

• 2 amps continuous current

• Very low saturation voltages

Applications

• Emergency lighting circuits

• Motor driving (including DC fans)

• Solenoid, relay and actuator drivers

• DC-DC modules

• Backlight inverters

• Power switches

• MOSFET gate drivers

Ordering information

Device marking

1E1

DEVICE Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP19100CFFTA 7 8 3000

Top view

Summary of content (8 pages)

PAGE 1
ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC(cont) = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
PAGE 2
ZXTP19100CFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -110 V Collector-emitter voltage (forward blocking) VCEX -110 V Collector-emitter voltage VCEO -100 V Emitter-collector voltage (reverse blocking) VECO -7 V Emitter-base voltage VEBO -7 V IC -2 A ICM -3 A Base current IB -1 A Power dissipation at TA =25°C(a) Linear derating factor PD 0.84 W mW/°C Power dissipation at TA =25°C(b) Linear derating factor PD 1.
PAGE 4
ZXTP19100CFF Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Collector-Base Breakdown BVCBO Voltage -110 Collector-Emitter Breakdown Voltage (Base open) BVCEX Collector-Emitter Breakdown Voltage (Base open) Max. Unit Conditions -135 V IC = -100␮A -110 -135 V IC = -100␮A, RBC < 1kΩ or 0.25V > VBC > -0.25V BVCEO -100 -135 V IC = -10mA (*) Emitter-Base Breakdown Voltage BVEBO -7 -8.
PAGE 6
ZXTP19100CFF Package outline - SOT23F c D b e1 b e L1 L E E1 b A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Min. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 L 0.48 0.68 0.0189 0.0268 0.20 0.0043 0.0079 L1 0.30 0.50 0.0153 0.0161 3.00 0.1102 0.1181 R 0.05 0.15 0.0019 0.
PAGE 8
ZXTP19100CFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.