Owner's manual

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SEMICONDUCTORS

SUMMARY

CEO

= -60V : R

SAT

= 38m ; I

= -3.5A

DESCRIPTION

Packaged in the E-line outline this new low saturation 60V PNP transistor

offers extremely low on state losses making it ideal for use in DC-DC circuits

and various driving and power management functions.

FEATURES

•

3.5 amps continuous current

•

Up to 15 amps peak current

•

Very low saturation voltages

•

Excellent gain up to 10 amps

APPLICATIONS

•

DC - DC converters

•

MOSFET gate drivers

•

Power switches

•

Motor control

DEVICE MARKING

ZXT

P20

ZXTP2012A

ISSUE 2 - NOVEMBER 2005

60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

DEVICE QUANTITY PER REEL

ZXTP2012ASTOA

ZXTP2012ASTZ

2,000 units / reel

2,000 units / carton

ORDERING INFORMATION

PINOUT

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Summary of content (6 pages)

PAGE 1
ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES E-line • 3.
PAGE 2
ZXTP2012A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -100 V Collector-emitter voltage BV CEO -60 V Emitter-base voltage BV EBO -7 V Continuous collector current (a) IC -3.5 A Peak pulse current Practical power dissipation at T A =25°C (a) I CM -15 A PD 1.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 8 mW/°C PD 0.71 W 5.
PAGE 3
ZXTP2012A CHARACTERISTICS ISSUE 2 - NOVEMBER 2005 3 SEMICONDUCTORS
PAGE 4
ZXTP2012A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -100 -120 Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 V I E =-100␮A Collector cut-off current I CBO Collector cut-off current MAX.
PAGE 5
ZXTP2012A TYPICAL CHARACTERISTICS ISSUE 2 - NOVEMBER 2005 5 SEMICONDUCTORS
PAGE 6
ZXTP2012A PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G 1.27 NOM L 13.00 13.97 0.050 NOM 0.512 0.