Instruction Manual

ManualsBrandsDiodes ManualsHardwareZXTP2012G

SEMICONDUCTORS

SUMMARY

CEO

= -60V : R

SAT

= 39m ; I

= -5.5A

DESCRIPTION

Packaged in the SOT223 outline this new low saturation 60V PNP transistor

offers extremely low on state losses making it ideal for use in DC-DC circuits

and various driving and power management functions.

FEATURES

•

Extremely low equivalent on-resistance; R

SAT

= 39mV at 5A

•

5.5 amps continuous current

•

Up to 15 amps peak current

•

Very low saturation voltages

•

Excellent gain characteristics specified up to 10 Amps

APPLICATIONS

•

DC - DC converters

•

MOSFET gate drivers

•

Charging circuits

•

Power switches

•

Motor control

DEVICE MARKING

ZXTP

2012

ZXTP2012G

ISSUE 1 - JUNE 2005

60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY PER

REEL

ZXTP2012GTA 7” 12mm

embossed

1,000 units

ZXTP2012GTC 13” 4,000 units

ORDERING INFORMATION

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Summary of content (6 pages)

PAGE 1
ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 39mV at 5A SOT223 • 5.
PAGE 2
ZXTP2012G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -100 V Collector-emitter voltage BV CEO -60 V Emitter-base voltage BV EBO -7 V Continuous collector current IC -5.5 A Peak pulse current Power dissipation at T A =25°C (a) I CM -15 A PD 3.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 24 mW/°C PD 1.6 W 12.
PAGE 3
ZXTP2012G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS
PAGE 4
ZXTP2012G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -100 -120 Collector-emitter breakdown voltage BV CER -100 -120 V I C =-1␮A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CEO -60 -80 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 Collector cut-off current I CBO Collector cut-off current ⬍1 ⬍1 I CER R ⱕ 1k⍀ MAX.
PAGE 5
ZXTP2012G TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS
PAGE 6
ZXTP2012G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E b2 2.90 3.10 0.114 0.122 C 0.23 0.33 0.009 0.013 D 6.30 6.70 0.248 0.264 6.70 7.30 0.264 0.287 E1 3.30 3.70 0.