Instruction Manual

ZXTP2012G
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-100 -120 V I
C
=-100␮A
Collector-emitter breakdown voltage BV
CER
-100 -120 V I
C
=-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BV
CEO
-60 -80 V I
C
=-10mA*
Emitter-base breakdown voltage BV
EBO
-7 -8.1 V I
E
=-100␮A
Collector cut-off current I
CBO
⬍1 -20
-0.5
nA
␮A
V
CB
=-80V
V
CB
=-80V,T
amb
=100⬚C
Collector cut-off current I
CER
R ⱕ 1k⍀
⬍1 -20
-0.5
nA
␮A
V
CB
=-80V
V
CB
=-80V,T
amb
=100⬚C
Emitter cut-off current I
EBO
⬍1 -10 nA V
EB
=-6V
Collector-emitter saturation voltage V
CE(SAT)
-15
-55
-90
-195
-25
-70
-120
-250
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
Base-emitter saturation voltage V
BE(SAT)
-1030 -1150 mV I
C
=-5A, I
B
=-500mA*
Base-emitter turn-on voltage V
BE(ON)
-920 -1020 mV I
C
=-5A, V
CE
=-1V*
Static forward current transfer ratio H
FE
100
100
45
10
250
200
90
25
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition frequency f
T
120 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output capacitance C
OBO
48 pF V
CB
=-10V, f=1MHz*
Switching times t
ON
t
OFF
39
370
ns I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.