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Issue 3 - May 2007 1 www.zetex.com

ZXTP2029F

100V, SOT23, PNP medium power transistor

Summary

(BR)CEV

> -130V, V

(BR)CEO

> -100V

C(cont)

= -3A

CE(sat)

= 45m⍀ typical

CE(sat)

< -80mV @ -1A

= 1.2W

Complementary part number ZXTN2020F

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally suited

to applications where space is at a premium.

Features

• Higher power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 130V forward blocking voltage

Applications

• MOSFET and IGBT gate driving

• Motor drive

• DC-DC converters

• High side switches

Ordering information

Device marking

953

Device Reel size

(inches)

Tape width Quantity per reel

ZXTP2029FTA 7 8mm 3,000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP2029F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -130 V Collector-emitter voltage V(BR)CEV -130 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -7.0 V Peak pulse current ICM -5 A Continuous collector current(a) IC -3 A Base current IB -1 A Power dissipation @ TA=25oC(a) Linear derating factor PD 1.
PAGE 4
ZXTP2029F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage V(BR)CBO -130 Collector-emitter breakdown voltage V(BR)CEV Collector-emitter breakdown voltage Unit Conditions -160 V IC=-100μA -130 -160 V IC =−1μA, 1V> VBE>-0.3V V(BR)CEO -100 -120 V IC=-10mA (a) Emitter-base breakdown voltage V(BR)EBO -7.0 -8.
PAGE 7
ZXTP2029F Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.
PAGE 8
ZXTP2029F Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.