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Issue 2 - March 2008 1 www.zetex.com

ZXTP25015DFH

15V, SOT23, PNP medium power transistor

Summary

CEO

> -15V

ECO

> -3V

C(cont)

= -4A

CE(sat)

= 33m⍀

CE(sat)

< -55mV @ 1A

= 1.25W

Complementary part number ZXTN25015DFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 15V forward blocking voltage

• 3V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

•DC - DC converters

• Motor drive

• High side driver

• Load disconnect switch

Ordering information

Device marking

1A7

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTP25015DFHTA 7 8 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC(cont) = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP25015DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-collector voltage (reverse blocking) VECO -3 V Emitter-base voltage VEBO -7 V Continuous collector current(b) IC -4 A Base current IB -1 A Peak pulse current ICM -10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.
PAGE 4
ZXTP25015DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Unit Conditions Collector-base breakdown voltage BVCBO -15 -35 Max. V IC = -100␮A Collector-emitter breakdown voltage (base open) BVCEO -15 -30 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.4 V IE = -100␮A Emitter-collector breakdown voltage (base open) BVECO -3 -8.
PAGE 6
ZXTP25015DFH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.