Owner's manual

ZXTP25020BFH
Issue 2 - March 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
CBO
-40 -60 V I
C
= -100␮A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
-40 -60 V
I
E
= -100␮A
(*)
R
BE
< 1k⍀
or 1V < V
BE
< -0.25V
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
Collector-emitter breakdown
voltage (base open)
BV
CEO
-20 -35 V
I
C
= -10mA
(*)
Emitter-base breakdown
voltage
BV
EBO
-7 -8.2 V I
E
= -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
-6 -8 V
I
E
= -100␮A
(*)
R
BC
< 10k⍀
or 0.25 < V
BC
< -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
-7 -8.6 V
I
E
= -100␮A
(*)
Collector-base cut-off current I
CBO
<-1 -50 nA V
CB
= -32V
-20 ␮AV
CB
= -32V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-100nAV
CE
= -32V; R
BE
< 1k⍀
or 1V < V
BE
< -0.25V
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-44 -60 mV
I
C
= -1A, I
B
= -100mA
(*)
-80 -110 mV
I
C
= -1A, I
B
= -20mA
(*)
-125 -190 mV
I
C
= -2A, I
B
= -40mA
(*)
-160 -210 mV
I
C
= -4A, I
B
= -200mA
(*)
-160 -210 mV
I
C
= -5A, I
B
= -500mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-930 -1000 mV
I
C
= -4A, I
B
= -200mA
(*)
Base-emitter turn-on voltage V
BE(on)
-820 -900 mV
I
C
= -4A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
100 200 300
I
C
= -10mA, V
CE
= -2V
(*)
80 160
I
C
= -1A, V
CE
= -2V
(*)
50 100
I
C
= -4A, V
CE
= -2V
(*)
45
I
C
= -10A, V
CE
= -2V
(*)
Transition frequency f
T
250 MHz I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance C
OBO
32.5 40 pF
V
CB
= -10V, f = 1MHz
(*)
Delay time t
d
53 ns V
CC
= -15V,
I
C
= -750mA,
I
B1
= I
B2
= -15mA
Rise time t
r
63 ns
Storage time t
s
128 ns
Fall time t
f
50 ns