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Issue 1 - February 2007 1 www.zetex.com

ZXTP25020CFF

20V, SOT23F, PNP medium power transistor

Summary

CEO

> -20V

ECO

> -7V

C(cont)

= -4.5A

CE(sat)

= 41m⍀

CE(sat)

< -65mV @ 1A

= 1.5W

Description

Advanced process capability and packaging maximise the power

handling and performance of this small outline transistor. The reverse

blocking capability of the transistor can often result in the elimination of

a series connected Schottky diode commonly required with either bipolar

transistors or MOSFETs when used in battery charging applications.

Features

•20V PNP

• Very low saturation voltage

• 7V reverse blocking capability

• High pulse current

• Low profile SOT23F package

Applications

• Mobile phone charging circuits

• Disconnect switch in portable products

• High side driving

• Motor control

• DC-DC convertors

• MOSFET and IGBT gate driving

Ordering information

Device marking

1F4

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP25020CFFTA 7 8 3000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor.
PAGE 2
ZXTP25020CFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -7 V Emitter-base voltage VEBO -7 V IC -4.5 A ICM -10 A Base current IB -1 A Power dissipation at Tamb =25°C(a) PD 0.79 W 6.3 mW/°C 1.13 W 9 mW/°C 1.50 W 12.0 mW/°C 1.96 W 15.
PAGE 4
ZXTP25020CFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -25 -50 V IC = -100␮A Collector-emitter breakdown voltage (base open) BVCEO -20 -35 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.2 V IE = -100␮A Emitter-collector breakdown voltage (reverse blocking) BVECX -7 -8.0 V IE = -100␮A(*) RBC < 10k⍀ or -0.25 < VBC <0.
PAGE 7
ZXTP25020CFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.
PAGE 8
ZXTP25020CFF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.