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Issue 3 - March 2008 1 www.zetex.com

ZXTP25020CFH

20V, SOT23, PNP medium power transistor

Summary

CEO

> -20V

ECO

> -7V

C(cont)

= -4A

CE(sat)

= 34m⍀

CE(sat)

< -55mV @ 1A

= 1.25W

Complementary part number ZXTN25020CFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 7V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

•DC - DC converters

• Motor drive

• High side driver

Ordering information

Device marking

1B2

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTP25020CFHTA 7 8 3,000

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP25020CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -7 V Emitter-base voltage VEBO -7 V IC -4 A ICM -10 A Base current IB -1 A Power dissipation at TA =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C PD 1.81 W 14.
PAGE 4
ZXTP25020CFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -25 -50 V IC = -100␮A Collector-emitter breakdown voltage (base open) BVCEO -20 -35 V IC = -10mA (*) Emitter-base breakdown voltage BVEBO -7 -8.2 V IE = -100␮A Emitter-collector breakdown BVECX voltage (reverse blocking) -7 -8.0 V IE = -100␮A(*) RBC < 10k⍀ or -0.25 < VBC < 0.
PAGE 7
ZXTP25020CFH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.
PAGE 8
ZXTP25020CFH Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.