Owner manual

ZXTP25020CFH
Issue 3 - March 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
CBO
-25 -50 V I
C
= -100␮A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-20 -35 V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Emitter-base breakdown
voltage
BV
EBO
-7 -8.2 V I
E
= -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
-7 -8.0 V
I
E
= -100␮A
(*)
R
BC
< 10k⍀
or -0.25 < V
BC
< 0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
-7 -8.8 V
I
E
= -100␮A
(*)
Collector-base cut-off
current
I
CBO
<-1 -50
-20
nA
␮A
V
CB
= -20V
V
CB
= -20V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-43 -55 mV
I
C
= -1A, I
B
= -100mA
(*)
-70 -100 mV
I
C
= -1A, I
B
= -20mA
(*)
-120 -170 mV
I
C
= -2A, I
B
= -40mA
(*)
-150 -210 mV
I
C
= -4A, I
B
= -200mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-930 -1050 mV
I
C
= -4A, I
B
= -200mA
(*)
Base-emitter turn-on voltage V
BE(on)
-810 -900 mV
I
C
= -4A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
200 350 500
I
C
= -10mA, V
CE
= -2V
(*)
150 250
I
C
= -1A, V
CE
= -2V
(*)
85 140
I
C
= -4A, V
CE
= -2V
(*)
40
I
C
= -10A, V
CE
= -2V
(*)
Transition frequency f
T
285 MHz I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance C
OBO
32.4 40 pF
V
CB
= -10V, f = 1MHz
(*)
Delay time t
d
38.4 ns V
CC
= -15V.
I
C
= -750mA,
I
B1
= I
B2
= -15mA
Rise time t
r
49.2 ns
Storage time t
s
168 ns
Fall time t
f
55 ns