Manual

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Issue 1 - July 2006 1 www.zetex.com

ZXTP25020DFH

20V, SOT23, PNP medium power transistor

Summary

CEO

> -20V

ECO

> -4V

C(cont)

= 4A

CE(sat)

< 60 mV @ 1A

CE(sat)

= 39 m⍀

= 1.25W

Complementary part number ZXTN25020DFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

•High gain

• Low saturation voltage

Applications

• MOSFET gate drivers

• Power switches

• Motor control

Ordering information

Device marking

1A3

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXTP25020DFHTA 7 8 3000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP25020DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage (forward blocking) VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -4 V Emitter-base voltage VEBO -7 V Continuous collector current(c) IC -4 A Base current IB -1 A Peak pulse current ICM -10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.
PAGE 4
ZXTP25020DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -25 Collector-emitter breakdown BVCEO voltage (base open) Emitter-base breakdown voltage Unit Conditions -55 V IC = -100␮A -20 -45 V IC = -10mA (*) BVEBO -7 -8.3 V IE = -100␮A Emitter-collector breakdown voltage (reverse blocking) BVECO -4 -8.5 V IC = -100␮A(*) Collector cut-off current ICBO <-1 Max.
PAGE 6
ZXTP25020DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.