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Issue 5 - March 2008 1 www.zetex.com

ZXTP25040DFH

40V SOT23 PNP medium power transistor

Summary

CEO

> -40V

ECO

> -3V ;

C(CONT)

= -3A

CE(sat)

= 55 m⍀ ;

CE(sat)

< -85mV @ 1A ;

= 1.25W

Complementary part number ZXTN25040DFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 3V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

•DC - DC converters

• Motor drive

• High side driver

Ordering information

Device marking

024

Device Reel size

(inches)

Tape width Quantity per reel

ZXTP25040DFHTA 7 8mm 3000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP25040DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -45 V Collector-emitter voltage (forward blocking) VCEO -40 V Emitter-collector voltage (reverse blocking) VECO -3 V Emitter-base voltage VEBO -7 V IC -3 A Peak pulse current ICM -9 A Power dissipation at TA =25°C (a) linear derating factor PD 0.73 5.84 W mW/°C Power dissipation at TA =25°C (b) linear derating factor PD 1.05 8.
PAGE 4
ZXTP25040DFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Symbol BVCBO Min. -45 Typ. -75 BVCEO -40 -65 V IC = -10mA (*) BVECO -3 -8.7 V IE = -100uA BVEBO -7 -8.2 V IE = -100␮A ICBO <-1 -50 -0.
PAGE 6
ZXTP25040DFH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.