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Issue 1 - March 2006 1 www.zetex.com

ZXTP25100BFH

100V, SOT23, PNP medium power transistor

Summary

(BR)CEX

> -140V, BV

(BR)CEO

> -100V

(BR)ECX

> -7V ;

C(cont)

= -2A

CE(sat)

< -130mV @ -1A

CE(sat)

= 108m typical

= 1.25W

Complementary part number ZXTN25100BFH

Description

Advanced process capability and package design have been used to

maximize the power handling and performance of this small outline

transistor. The compact size and ratings of this device make it ideally

suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 140V forward blocking voltaget

• 7V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

•DC - DC converters

• Motor drive

• Relay, lamp, and solenoid drive

Ordering information

Device marking

056

Device Reel size

(inches)

Tape width Quantity per reel

ZXTP25100BFHTA 7 8mm 3,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
PAGE 2
ZXTP25100BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -140 V Collector-emitter voltage (forward blocking) VCEX -140 V Collector-emitter voltage VCEO -100 V Emitter-collector voltage (reverse blocking) VECX -7 V Emitter-base voltage VEBO -7 V IC -2 A Peak pulse current ICM -5 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.73 5.84 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.05 8.
PAGE 4
ZXTP25100BFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -140 Collector-emitter breakdown voltage (forward blocking) BVCEX Collector-emitter breakdown voltage (base open) Max. Unit Conditions -165 V IC = -100 A -140 -165 V IC = -100 A, RBE < 1k or -0.25V < VBE < 1V BVCEO -100 -125 V IC = -10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX -7 8.
PAGE 6
ZXTP25100BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.