Instruction Manual

ZXTP558L
Document number: DS32186 Rev. 2 - 2
2 of 6
www.diodes.com
October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTP558L
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-400 V
Collector-Emitter Voltage
V
CEO
-400 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
125
°C/W
Thermal Resistance, Junction to Lead (Note 6)
R
θ
JL
50
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For the through-hole device mounted vertically, in still air conditions, with the lead length 6mm from the bottom of package to the board.
6. Thermal resistance from junction to solder-point (2mm from the bottom of package along the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.