Manual

ZXTP749F
Document Number: DS31901 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTP749F
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-35 -60 - V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 7)
BV
CEO
-25 -40 - V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.4 - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
- <1
-50
-0.5
nA
µA
V
CB
= -28V
V
CB
= -28V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- <1 -50 nA
V
EB
= -5.6V
Static Forward Current Transfer Ratio (Note 7)
h
FE
200
130
100
25
320
230
180
50
500
-
-
-
-
I
C
= -100mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
-
-
-85
-229
-150
-350
mV
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE
(
on
)
- -786 -850 mV
I
C
= -1A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 7)
V
BE
(
sat
)
- -895 -1000 mV
I
C
= -1A, I
B
= -100mA
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%