Datasheet

2N7000
2N7000
N
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
N
Version 2011-02-16
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
350 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx.
Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25°C) Grenzwerte (T
A
= 25°C)
2N7000
Drain-Source-voltage – Drain-Source-Spannung V
DSS
60 V
Drain-Gate-voltage – Drain-Gate-Spannung R
GS
≤ 1 MΩ V
DGR
60 V
Gate-Source-voltage – Gate-Source-Spannung dc
t
p
< 50 µs
V
GSS
V
GSS
± 20 V
± 40 V
Power dissipation – Verlustleistung P
tot
350 mW
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
I
D
I
DM
200 mA
500 mA
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
150°C
-55…+150°C
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
S
G D