Datasheet

BC817K / BC818K
BC817K / BC818K
NPN
Surface Mount Low Rth Si-Epi-Planar Transistors
Si-Epi-Planar Low Rth Transistoren für die Oberflächenmontage
NPN
Version 2011-10-26
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 500 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25°C) Grenzwerte (T
A
= 25°C)
BC817K BC818K
Collector-Base-volt. – Kollektor-Basis-Spannung C open V
CBO
50 V 30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open V
CEO
45 V 25 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open V
EBO
5 V
Power dissipation – Verlustleistung T
sp
≤ 115°C P
tot
500 mW
Collector current – Kollektorstrom (dc) I
C
500 mA
Peak Collector current – Kollektor-Spitzenstrom I
CM
1 A
Base current – Basisstrom I
B
100 mA
Peak Base current – Basis-Spitzenstrom I
BM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
+150°C
-55…+150°C
Characteristics (T
j
= 25°C) Kennwerte (T
j
= 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 1 V, I
C
= 100 mA Group -16
Group -25
Group -40
h
FE
h
FE
h
FE
100
160
250
–
–
–
250
400
630
V
CE
= 1 V, I
C
= 500 mA all groups h
FE
40 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
I
C
= 500 mA, I
B
= 50 mA V
CEsat
– – 0.7 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
I
C
= 500 mA, I
B
= 50 mA V
BEsat
– – 1.2 V
2 Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
1 2
3
Type
Code
1.9