Datasheet

ManualsBrandsDIOTEC ManualsDiodesZener diode ZPY 62 V Enclosure type (semiconductors) DO 41 Zener voltage 62 V Max. power (P total) 1.3 W

BZX85C...

TELEFUNKEN Semiconductors

Rev. A2, 24-Jun-96

1 (5)

Silicon Epitaxial Planar Z–Diodes

Features

Sharp edge in reverse characteristics

Low reverse current

Low noise

Very high stability

Available with tighter tolerances

Applications

Voltage stabilization

94 9369

Absolute Maximum Ratings

= 25 C

Parameter Test Conditions Type Symbol Value Unit

Power dissipation l=4mm, T

=25 C P

1.3 W

Junction temperature T

175 C

Storage temperature range T

stg

–65...+175 C

Maximum Thermal Resistance

= 25 C

Parameter Test Conditions Symbol Value Unit

Junction ambient l=4mm, T

=constant R

thJA

110 K/W

Characteristics

= 25 C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage I

=200mA V

1 V

Summary of content (5 pages)

PAGE 1
BZX85C... Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications Voltage stabilization 94 9369 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...
PAGE 2
BZX85C... Type BZX85C... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT for VZT 1) and rzjT mA V W 80 2.5 to 2.9 < 20 80 2.8 to 3.2 < 20 80 3.1 to 3.5 < 20 60 3.4 to 3.8 < 20 60 3.7 to 4.1 < 15 50 4.0 to 4.6 < 13 45 4.4 to 5.0 < 13 45 4.8 to 5.4 < 10 45 5.2 to 6.0 <7 35 5.8 to 6.6 <4 35 6.4 to 7.
PAGE 3
BZX85C... Typical Characteristics (Tj = 25_C unless otherwise specified) 1000 C D – Diode Capacitance ( pF ) Ptot – Total Power Dissipation ( W ) 2.0 1.6 1.2 l=4mm 0.8 l=10mm l=20mm 0.4 0 –50 10 0 50 100 150 200 0 10 20 30 40 60 50 VZ – Z-Voltage ( V ) Figure 3. Diode Capacitance vs. Z–Voltage 1000 250 r Z – Differential Z-Resistance ( W ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) f = 1 MHz Tamb= 25°C 95 9616 Figure 1. Total Power Dissipation vs.
PAGE 4
BZX85C... Dimensions in mm Cathode Identification technical drawings according to DIN specifications 94 9368 ∅ 0.85 max. ∅ 2.5 max. Standard Glass Case 54 B 2 DIN 41880 JEDEC DO 41 Weight max. 0.3 g 4 (5) 26 min. 4.1 max. 26 min. TELEFUNKEN Semiconductors Rev.
PAGE 5
BZX85C... Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.