Datasheet

BZX85C...
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
3 (5)
Typical Characteristics (T
j
= 25 C unless otherwise specified)
–50
0
0.4
0.8
1.2
1.6
2.0
95 9612
0 50 100 150
P – Total Power Dissipation ( W )
tot
T
amb
– Ambient Temperature ( °C )
200
l=4mm
l=10mm
l=20mm
Figure 1. Total Power Dissipation vs. Ambient Temperature
0 5 10 15 20
0
50
100
150
200
250
30
95 9613
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
l – Lead Length ( mm )
25
ll
T
L
=constant
Figure 2. Thermal Resistance vs. Lead Length
010203040
1
10
100
1000
60
95 9616
C – Diode Capacitance ( pF )
D
V
Z
– Z-Voltage ( V )
50
f=1MHz
T
amb
=25°C
V
R
=30V
V
R
=20V
V
R
=5V
V
R
=2V
V
R
=0V
Figure 3. Diode Capacitance vs. Z–Voltage
110
100
95 9615
1
10
100
1000
r – Differential Z-Resistance ( )
Z
V
Z
– Z-Voltage ( V )
I
Z
=1mA
5mA
10mA
2mA
20mA
Figure 4. Differential Z–Resistance vs. Z–Voltage
1
10
100
1000
Z – Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
– Pulse Length ( ms )95 9614
10
–1
10
0
10
1
10
2
10
3
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
Single Pulse
R
thJA
=110K/W
T=T
jmax
–T
amb
i
ZM
=(–V
Z
+(V
Z
2
+4r
zj
T/Z
thp
)
1/2
)/(2r
zj
)
Figure 5. Thermal Response