Data Sheet

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Parameter Typ. Max. Units

θJA

Maximum Junction-to-Ambient 75 100 °C/W

IRLML2502

HEXFET

Power MOSFET

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

that HEXFET



power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

Thermal Resistance

DSS

= 20V

DS(on)

= 0.045Ω

l Ultra Low On-Resistance

l N-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

Description

04/30/03

www.irf.com 1

Parameter Max. Units

Drain- Source Voltage 20 V

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 4.2

@ T

= 70°C Continuous Drain Current, V

@ 4.5V 3.4 A

Pulsed Drain Current  33

= 25°C Power Dissipation 1.25

= 70°C Power Dissipation 0.8

Linear Derating Factor 0.01 W/°C

Gate-to-Source Voltage ± 12 V

STG

Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

Micro3

PD - 93757C

Summary of content (9 pages)

PAGE 1
PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRLML2502 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRLML2502 100 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.25V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 2.25V 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C V DS = 15V 20µs PULSE WIDTH 2.4 2.8 3.2 3.6 Fig 3.
PAGE 4
IRLML2502 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 800 Ciss 600 400 200 Coss Crss 0 1 10 VGS , Gate-to-Source Voltage (V) 1200 ID = 4.0A VDS = 10V 8 6 4 2 0 10 0 100 4 8 12 16 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRLML2502 ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10.
PAGE 6
RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRLML2502 RDS(on) , Drain-to -Source Voltage ( Ω ) 0.05 0.04 Id = 4.0A 0.03 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, Gate -to -Source Voltage ( V ) Fig 11. On-Resistance Vs. Gate Voltage 6 7.0 0.30 VGS = 2.5V 0.20 0.10 VGS = 4.5V 0.00 0 10 20 30 40 iD , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current www.irf.
PAGE 7
IRLML2502 Micro3 Package Outline Dimensions are shown in millimeters (inches) D -B- 3 E -A- LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN 3 3 DIM H 1 0.20 ( .008 ) 2 M A M e e1 θ A INCHES MILLIMETERS A MIN .032 MAX .044 MIN 0.82 MAX 1.11 A1 .001 .004 0.02 0.10 B .015 .021 0.38 0.54 C .004 .006 0.10 0.15 D .105 .120 2.67 3.05 e .0750 BASIC 1.90 BASIC e1 .0375 BASIC 0.95 BASIC E .047 .055 1.20 1.40 H .083 .098 2.10 2.50 L .005 .010 0.13 0.
PAGE 8
IRLML2502 Part Marking Information Micro3 Notes : T his part marking information applies to devices produced before 02/26/2001 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24
PAGE 9
IRLML2502 Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2.