Datasheet

1) Except CDS2C05GTA and CDS3C05GTA V
leak
= 3.3 V. Any operating voltage lower than V
leak
results in lower leakage current.
Features
ESD protection to IEC 61000-4-2, level 4
Bidirectional ESD protection in one component
No change in ESD protection performance at temperatures
up to 85 °C (temperature derating)
Use of parasitic capacitance for EMI suppression and
high-frequency filtering (replacement of additional MLCC)
High surge current capability
Low parasitic inductance
Low leakage current
Fast response time <0.5 ns
Lead-free nickel barrier terminations suitable for lead-free soldering
RoHS-compatible
Applications
Interfaces, data lines, power lines and audio lines, pushbuttons,
serial ports, ICs and I/O ports
Consumer electronic products (TV, DVD player/recorder, set-top
box, game consoles, MP3 player, digital still/video camera, etc.)
EDP products (desktop and notebook computer, monitor, PDA,
printer, memory card, control unit, head set, speaker, HDD, optical
drive, etc.)
Industrial applications
Design
Multilayer technology
Nickel barrier termination (Ag/Ni/Sn) for lead-free soldering
Marking
Due to the symmetrical configuration no marking information is
needed.
Single chip
4-fold array
General technical data
Maximum DC operating voltage V
DC,max
5.6 ... 22 V
Typical capacitance C
typ
22 ... 470 pF
Air discharge ESD capability to IEC 61000-4-2 V
ESD,air
15 kV
Contact discharge ESD capability to IEC 61000-4-2 V
ESD,contact
8 kV
Leakage current
1)
(V
leak
= 5.6 V) I
leak
1 µA
Operating temperature (without derating) T
op
40/+85 °C
Storage temperature T
stg
40/+125 °C
CeraDiodes
Standard series
Page 2 of 19Please read Cautions and warnings and
Important notes at the end of this document.