Specifications

S1C62N82 TECHNICAL HARDWARE EPSON I-131
CHAPTER 6: ELECTRICAL CHARACTERISTICS
6.5 Oscillation Characteristics
Oscillation characteristics will vary according to different
conditions. Use the following characteristics are as refer-
ence values.
S1C62N82/62A82 (OSC1 Crystal Ocsillation)
Unless otherwise specified
V
DD=0 V, VSS=-3.0 V, Crystal : Q13MC146, CG=25 pF,
C
D=built-in, Ta=25°C
S1C62L82 (OSC1 Crystal Ocsillation)
Unless otherwise specified
V
DD=0 V, VSS=-1.5 V, Crystal : Q13MC146, CG=25 pF,
C
D=built-in, Ta=25°C
Item
Oscillation start
voltage
Oscillation stop
voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistor
Symbol
Vsta
(Vss)
Vstp
(Vss)
C
f/V
f/I
f/C
Vhho
(Vss)
Rleak
Condition
Tsta 3 sec
Tstp 10 sec
Including the parasitic capacity inside the IC
Vss=-1.1 to -3.5 V (-0.9)
C =5–25 pF
Between OSC1 and V and Vss
DD
Min
-1.1
-1.1
(-0.9)
-10
40
200
Typ
20
Unit
V
V
pF
ppm
ppm
ppm
V
M
Max
5
10
-3.5
Ω
*1
*1
GG
C
D
≤
≤
Item
Oscillation start
voltage
Oscillation stop
voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistor
Symbol
Vsta
(Vss)
Vstp
(Vss)
C
f/V
f/I
f/C
Vhho
(Vss)
Rleak
Condition
Tsta 3 sec
Tstp 10 sec
Including the parasitic capacity inside the IC
Vss=-2.2 to -5.5 V
C =5–25 pF
Between OSC1 and V and Vss
DD
Min
-2.2
-2.2
-10
40
200
Typ
20
Unit
V
V
pF
ppm
ppm
ppm
V
M
Max
5
10
-5.5
Ω
D
C
G
≤
≤
G
*1 Items enclosed in parentheses ( ) are those used when operating
at heavy load protection mode.