MF302-13 S1F70000 Series Technical Manual IEEE1394 POWER SUPPLY Controller IC S1R77801F00A S1F70000 Series Technical Manual S1F70000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/ This manual was made with recycle paper, and printed using soy-based inks. First issue November,1990 U Revised July,2001 in Japan H B 4.
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S1F70000 Series Technical Manual
Contents Introduction .......................................................................................................................................................................... 1 Selection Guide .................................................................................................................................................................... 2 1. DC/DC Converter S1F76600 Series DESCRIPTION .......................................................................................
Contents S1F76540 Series DESCRIPTION ........................................................................................................................................................ 2–15 FEATURES ............................................................................................................................................................. 2–15 APPLICATIONS ....................................................................................................................................
Contents CHARACTERISTICS GRAPH ................................................................................................................................ 3–15 S1F79100Y Series DESCRIPTION ........................................................................................................................................................ 3–21 FEATURES .......................................................................................................................................................
Contents PACKAGE MARKINGS ................................................................................................................................. 4–26 FUNCTIONAL DESCRIPTIONS .................................................................................................................... 4–27 TYPICAL APPLICATIONS ............................................................................................................................ 4–28 S1F71100 Series DESCRIPTION ..........................
Contents 5 . Voltage Detector S1F77200Y Series DESCRIPTION .......................................................................................................................................................... 5 –1 FEATURES ............................................................................................................................................................... 5 –1 LINEUP ................................................................................................................
Contents EMBOSS CARRIER TAPING STANDARD (SOP2-24pin) TAPING INFORMATION ......................................................................................................................................... 6 –14 REEL SPECIFICATIONS ........................................................................................................................................ 6 –16 DEVICE POSITIONING ..................................................................................................................
Introduction This book describes SEIKO EPSON's full lineup of power supply ICs and includes a complete set of product specifications. Also included are sections on quality assurance and packaging. We suggest that you use the selector guide beginning on the following page to choose the IC or IC series that most closely matches your application. Then you can S1F70000 Series Technical Manual use the detailed product descriptions in subsequent sections to confirm device specifications and characteristics.
Selection Guide DC/DC Converter Product S1F76600M0B0 S1F76600C0B0 S1F76620M0A0 Features • • • • Supply voltage conversion IC. It effectively converts input voltage VDD into –VDD or 2VDD Output current : Max. 30mA at –5V Power conversion efficiency: Typ. 95% • • • • Supply voltage conversion IC. It effectively converts input voltage VDD into –VDD or 2VDD Output current : Max. 30mA at 5V Power conversion efficiency: Typ.
Selection Guide Product S1F78100Y2D0 S1F78100Y2R0 S1F78100Y2L0 Features • 3.00V positive output voltage regulator. • Low operating current (Typ. 3.0 µA). • Input voltage stability (Typ. 0.1%/V). • • • • • • 2.80V positive output voltage regulator. Low operating current (Typ. 3.0 µA). Input voltage stability (Typ. 0.1%/V). 2.60V positive output voltage regulator. Low operating current (Typ. 3.0 µA). Input voltage stability (Typ. 0.1%/V). Package SOT89-3pin SOT89-3pin SOT89-3pin S1F78100Y2F0 • 2.
Selection Guide Product Features Package S1F76310M1L0 • • • • • • Step-up switching regulator (from 1.5V to 2.4V). Low operating voltage (Min. 0.9V). Low operating current (Typ. 7µA). High precision voltage detection function and battery backup function. Built-in CR oscillator circuit. Power-on clear function. SOP3-8pin S1F76380M1H0 • • • • • • • Step-up switching regulator (from 1.5V to 2.2V). Low operating voltage (Min. 0.9V). Low operating current. (Typ. 7µA). Built-in CR oscillator circuit.
Selection Guide Product Features Package S1F77210Y120 • Voltage detection (Typ. 4.60V). • Output format: COMS. • Low operating power (Typ. 2.0 µA, VDD = 5.0V). SOP89-3pin S1F77210Y1J0 • Voltage detection (Typ. 4.40V). • Output format: COMS. • Low operating power (Typ. 2.0 µA, VDD = 5.0V). SOP89-3pin S1F77210Y1M0 • Voltage detection (Typ. 4.20V). • Output format: COMS. • Low operating power (Typ. 2.0 µA, VDD = 5.0V). SOP89-3pin S1F77210Y1T0 • Voltage detection (Typ. 4.00V).
Selection Guide Product S1F77200Y1B0 S1F77200Y1Y0 S1F77200Y1A0 6 Features • Voltage detection (Typ. 1.15V). • Output format: N-ch open drain. • Low operating power (Typ. 1.5 µA, VDD = 1.5V). • • • • • • Voltage detection (Typ. 1.10V). Output format: N-ch open drain. Low operating power (Typ. 1.5 µA, VDD = 1.5V). Voltage detection (Typ. 1.05V). Output format: N-ch open drain. Low operating power (Typ. 1.5 µA, VDD = 1.5V).
1.
S1F76600 Series DESCRIPTION The S1F76600 Series is a highly efficient CMOS DC/ DC converter for doubling an input voltage (from –1.5V to –8V). This power-saving IC allows portable computers and similar hand-held equipment to operate from a single power supply, even when they incorporate LSIs that operate at voltages different from those of logic circuits, for example, LCD drivers and analog LSIs. The S1F76600C0B0 is available in 8-pin plastic DIPs, and the S1F76600M0B0, in 8-pin plastic SOPs.
S1F76600 Series SPECIFICATIONS Absolute Maximum Ratings Parameter Symbol Rating Unit Input voltage range VI –10.0 to 0.5 V Output voltage range VO Min. –20.0 V Power dissipation PD 300 (DIP) mW 150 (SOP) Operating temperature range Topr –40 to +85 ˚C Storage temperature range Tstg –65 to +150 ˚C Soldering temperature(for 10s). See note. Tsol 260 ˚C Note: Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions.
S1F76600 Series CL 1 8 2 7 3 6 4 5 + C2 22µF RL S1F76600 Series Battery D1 1MΩ + C1 10µF 3. RL min is a function of VI. Minimum load resistance (kΩ) 5 4 VSTA1 3 2 1 0 1.0 VSTA2 1.5 3.0 2.0 Input voltage (V) 4.0 5.0 6.0 Electrical Characteristics VDD = 0V, Ta = –40 to +85˚C unless otherwise noted Parameter Symbol Condition Rating Unit Min. Typ. Max. Input voltage VI –8.0 — –1.5 V Output voltage VO –16.
S1F76600 Series Typical Performance Characteristics 1000 Ta = 25°C VI = –5V VI = –3V VI = –2V fOSC [kHz] fOSC [kHz] 100 10 1 10 100 1000 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 VI = –5.0V VI = –3.0V VI = –2.0V –40 10000 –20 0 ROSC [kΩ] (1) Clock frequency vs. External resistance 20 40 Ta [°C] 60 80 100 (2) Clock frequency vs. Ambient temperature 50 0 fOSC = 40kHz 45 Ta = 25˚C VI = –5.
S1F76600 Series 0 0 Ta = 25°C VI = –2.0V –1 S1F76600 Series Ta = 25°C VI = –3.0V VO [V] VO [V] –2 –5 –3 –4 –5 –6 –10 0 10 20 0 30 1 2 3 IO [mA] (5) Output voltage vs. Output current 4 5 6 IO [mA] 7 8 9 10 (6) Output voltage vs. Output current 300 300 Ta = 25°C IO = 7mA Ta = 25°C IO = 10mA 200 RO [Ω] RO [Ω] 200 100 100 0 0 –7 –6 –5 –4 –3 –2 –1 0 –7 VI [V] –5 –4 –3 –2 –1 0 VI [V] (7) Output impedance vs.
S1F76600 Series 100 90 80 IO = 30mA 70 70 IO = 20mA Peff [%] 60 IO = 0.5mA IO = 1.0mA IO = 2.0mA IO = 4.0mA 90 IO = 10mA 80 Peff [%] 100 IO = 2mA IO = 5mA 50 40 60 50 40 30 30 VI = –5.0V 20 20 10 10 0 VI = –3.0V 0 1 10 100 1000 1 10 fOSC [kHz] 100 1000 fOSC [kHz] (9) Multiplication efficiency vs. Clock frequency (10) Multiplication efficiency vs.
S1F76600 Series 100 90 36 ROSC = A • (1/fOSC) 32 70 (A : Constant, When GND is 0V and VDD is 5V, A is approximately 2.0 × 1010 (I/F).) 28 Ta = 25°C VI = –2.0V 24 50 II [mA] 60 20 II 40 16 30 12 20 8 10 4 0 So, the ROSC value can be obtained from this formula. (Recommended oscillation frequency : 10kHz to 30kHz (ROSC : 2MΩ to 680kΩ)) When the external clock operates, make the pin OSC2 open as shown below and input the 50% duty of the external clock from the pin OSC1.
S1F76600 Series TYPICAL APPLICATIONS Parallel Connection Connecting two or more chips in parallel reduces the output impedance by 1/n, where n is the number of devices used. VDD = 0 V 5V VI = –5 V 1 8 2 7 + C2 10µF 1MΩ 1 8 2 7 3 6 4 5 1MΩ 6 3 5 4 C1 10µF + C1 10µF + VO = –10 V Serial Connection Connecting two or more chips in series obtains a higher output voltage than can be obtained using a parallel connection, however, this also raises the output impedance.
S1F76600 Series Positive Voltage Conversion S1F76600 Series Diodes can be added to a circuit connected in parallel to make a negative voltage positive. VDD = 0 V VI = –5 V 5V VO' = 3.8 V C2 1 8 2 7 3 6 4 5 + 10µF 1MΩ C1 + 10µF Simultaneous Voltage Conversion Combining a multiplier circuit with a positive voltage conversion circuit generates both –10 and 3.8 V outputs from a single input. Potential levels VO2 = 3.8 V VDD = 0 V VI= –5 V VDD = 0 V VI = –5 V VO1 = –10 V 5V VO2 = 3.
S1F76620 Series S1F76620 Series CMOS DC/DC Converter (Voltage Doubler) DESCRIPTION FEATURES S1F76620 is a high efficiency and low power consumption CMOS DC/DC converter. It enables to obtain 2 times step-up output (3.0 to 16V) from input voltage (1.5 to 8V). Also, S1F76620 enable to drive ICs (liquid crystal driver, analog IC, etc.
S1F76620 Series PIN DESCRIPTIONS POFF 1 8 VO GND 2 7 CAP1+ OSC1 3 6 CAP1– OSC2 4 5 VDD S1F76620 Series Pin Assignments Pin Assignments of SOP4-8pin Pin descriptions Pin No. Pin name 1 POFF 2 GND (VSS) 3 OSC1 Oscillation resistor connection pin. Works as the clock input pin when the external clock operates. 4 OSC2 Oscillation resistor connection pin. Opens when the external clock operates. 5 VDD 6 CAP1– Pump up capacitor minus side connection pin for 2 times step-up.
S1F76620 Series Pad Center Coordinates (S1F76620D0A0) Pad No.
S1F76620 Series CR Oscillator S1F76620 has a built-in CR oscillator as the internal oscillator, and an external oscillation resistor ROSC is connected between the pins OSC1 and OSC2 before operation. OSC1 (Note 1) ROSC OSC2 Voltage Conversion Circuit The voltage conversion circuit uses clocks generated in the CR oscillator to double the input supply voltage VDD.
S1F76620 Series ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Ta = –40 to +85°C) Rating Parameter Symbol Min. Max. Unit Remarks — Input supply voltage VIN –0.5 10.0 V Input pin voltage VI –0.5 VDD + 0.5 V Output voltage VO — 20 V Output supply voltage VCAP+ –0.5 VDD + 0.5 V CAP+ Output pin voltage VCAP– –0.5 VO + 0.
S1F76620 Series Recommended Operating Conditions Parameter Symbol Rating Unit Remarks Min. Max. VSTA1 1.5 — V ROSC = 1MΩ C2 ≥ 10µF CL/C2 ≥ 1/20 See note 2. VSTA2 2.2 — V ROSC = 1MΩ Step-up stop voltage VSTP — 1.5 V ROSC = 1MΩ Output load resistance RL RLmin See note 3. — Ω — Output load current IO — 30 mA — Oscillation frequency fOSC 10 30 kHz — External resistor for oscillation ROSC 680 2000 kΩ — Step-up capacitor C1, C2 3.
S1F76620 Series Electrical Characteristics (VDD = 5V, Ta = –40 to +85°C) Parameter Rating Symbol Min. Typ. Max. Unit Remarks Input supply voltage VDD 1.8 — 8.0 V — Output voltage VO — — 16.0 V — IOPR — 35 50 µA ROSC = 1MΩ IQ — — 1.0 µA — Oscillation frequency fOSC 16 20 24 kHz ROSC = 1MΩ Output impedance RO — 85 130 Ω IO = 10mA Step-up power conversion efficiency Peff 90 95 — % IO = 5mA Input leak current ILKI — — 1.
S1F76620 Series Characteristics Graph 1000 30 26 VDD=5V 24 fOSC[kHz] fOSC[kHz] 100 VDD=3V 10 S1F76620 Series 28 Ta=25°C VDD=2V VDD=5V 22 20 18 16 14 VDD=2V 12 1 10 100 1000 ROSC[kΩ] 10000 10 (1) Oscillation frequency vs. External resistance for oscillation –40 –20 0 20 40 Ta[°C] VDD=3V 60 80 100 (2) Oscillation frequency vs.
S1F76620 Series 6 4 5 3 VO [V] VO [V] 4 3 2 2 1 Ta=25°C VDD=3V C1=C2=10µF 1 0 0 0 5 10 IO [mA] 15 0 20 (5) Output voltage (VO) vs. Output current 2 300 250 250 200 200 150 100 3 4 5 6 7 IO [mA] 8 9 10 Ta=25°C IO =10mA 150 Ta=25°C IO =5mA 0 1 2 50 3 4 5 6 0 0 VDD[V] (7) Output impedance vs. Input current 1 1–18 2 100 50 0 1 (6) Output voltage (VO) vs.
150 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 Ta=25°C VDD=3V 10 C1=C2=10µF 0 10 15 20 90 80 120 90 50 40 60 Peff[%] 60 IDD[mA] Peff[%] 70 30 20 10 0 0 10 30 Ta=25°C VDD=5V C1=C2=10µF 0 20 30 10 0 0 5 IO [mA] IO [mA] (10) Step-up power conversion efficiency vs. Output current 2 Input current vs. Output current 2 (9) Step-up power conversion efficiency vs. Output current 1 Input current vs.
S1F76620 Series 100 90 90 IO =1mA IO =5mA IO =10mA 80 70 Peff[%] Peff[%] 100 IO =2mA Ta=25°C VDD=3V C1=C2=10µF 60 IO =0.5mA 80 IO =1mA IO =2mA 70 IO =5mA Ta=25°C VDD=2V C1=C2=10µF 60 50 50 1 10 100 focs[kHz] 1000 1 (13) Step-up power conversion efficiency vs. Oscillation frequency 2 10 100 focs[kHz] 1000 (14) Step-up power conversion efficiency vs. Oscillation frequency 3 1.7 1.6 VSTA1[V] 1.5 Ta=25°C C1=C2=10µF ROSC=1MΩ 1.4 1.3 1.2 1.1 1.0 0.
S1F76620 Series EXAMPLE OF REFERENCE EXTERNAL CONNECTION VI 1 POFF VO 8 2 GND CAP1+ 7 3 OSC1 CAP1– 6 4 OSC2 VDD 5 S1F76620 Series 2 Times Step-up 2 times step-up output of VO (2 × VDD) is obtained from the circuit shown in Figure 1. 2 •VI + – + – Figure 1 2 Time Step-up Operation Parallel Connection It is possible to make the output impedance (RO) small when several pieces of the circuit shown in Figure 1 are connected. Parallel connection of n circuits reduces RO to 1/n approximately.
S1F76620 Series Series Connection When S1F76620 is connected in series (VDD and VO in the previous stage are connected to GND and VDD in the next stage respectively), the output voltage can be increased more. But the series connection makes the output impedance high. Figure 3 shows an example of the series connection to get VO = 15V from VDD = 5V.
S1F76620 Series S1F76620 Series Negative Voltage Conversion S1F76620 can boost input voltage to twice on the positive potential side by using the circuit shown in Figure 6. But the output voltage drops by the forward voltage VF of the diode. When GND is 0V, VDD is 5V and V F is 0.6V as shown in Figure 6 for example, VO is calculated as follows: VO = –5V + 2 × 0.6V = –3.8V.
S1F76620 Series MEASUREMENT CIRCUIT VO IO A V RL V IOPR 1 POFF VO 8 2 GND CAP1+ 7 C1 A 3 OSC1 CAP1– 6 4 OSC2 VDD 5 + – + C2 – ROSC VI 1–24 EPSON S1F70000 Series Technical Manual
S1F76620 Series MECHANICAL DATA S1F76620M0A0 SOP4-8pin S1F76620 Series Reference D E 5 INDEX HE 8 θ 1 4 θ2 e Symbol E D1 A A1 A2 e b C θ L L1 L2 HE D θ2 θ3 R R1 b A1 A2 A R1 R C Dimension in Milimeters Nom. 5 — 1.75 0.15 1.6 1.27 0.25 0.35 0.05 0.15 Min. 4.8 — L2 θ3 Max. 5.2 — 0.45 0.25 Dimension in Inches* Nom. Max. (0.197) (0.204) — — (0.069) (0.006) (0.063) (0.050) (0.010) (0.014) (0.017) (0.002) (0.006) (0.009) Min. (0.189) — 0.55 6.4 4.8 6.8 5 L L1 (0.022) 7.2 5.2 (0.
2.
S1F76610 Series S1F76610 Series CMOS DC/DC Converter (Voltage Doubler / Tripler) & Voltage Regulator The S1F76610 Series is a highly effecient CMOS DC/ DC converter for doubling or tripling an input voltage. It incorporates an on-chip voltage regulator to ensure stable output at the specified voltage. The S1F76610 Series offers a choice of three, optional temperature gradients for applications such as LCD panel power supplies.
S1F76610 Series PIN ASSIGNMENTS CAP+ 1 14 VDD CAP– 2 13 OSC1 CAP2+ 3 12 OSC2 CAP2– 4 11 POFF TC1 5 10 RV TC2 6 9 VREG VI 7 8 VO CAP+ CAP– NC CAP2+ CAP2– TC1 TC2 VI S1F76610C0B0/M0B0 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VDD OSC1 NC OSC2 POFF RV VREG VO S1F76610M2B0 PIN DESCRIPTIONS S1F76610C0B0/M0B0 2–2 Pin No.
S1F76610 Series SPECIFICATIONS Absolute Maximum Ratings Ratings Codes Input supply voltage VI – VDD Input terminal voltage VI – VDD Output voltage V O – VDD Units –20/N to VDD + 0.3 V N = 3: Boosting to a triple voltage VI – 0.3 to VDD + 0.3 V OSC1, OSC2, POFF V TC1, TC2, RV –20 to VDD + 0.3 V VO Note 3) VREG Note 3) V O to VDD + 0.3 V PD Max.
S1F76610 Series C1 10µF + 1 14 2 13 3 12 4 11 5 10 6 9 7 8 ROSC 1MΩ C2 + 10µF CL RL +C3 22µF D1 3. RLmin is a function of V1 Minimum load resistance (kΩ) 5 VSTA2 VSTA1 4 3 2 Voltage tripler 1 Voltage doubler 0 1 1.5 2 3 4 Input voltage (V) 5 6 Electrical Characteristics VDD = 0V, V1 = –5V, Ta = –40 to +85°C unless otherwise noted Parameter Symbol Conditions Rating Min. Typ. Max. Unit Input voltage VI –6.0 — –1.8 V Output voltage VO –18.0 — — V –18.0 — –2.
S1F76610 Series Rating Symbol Conditions Min. Typ. Max. Unit Output impedance RO IO = 10mA — 150 200 Ω Multiplication efficiency Peff IO = 5mA 90.0 95.0 — % — 0.2 — %/V — 5.0 — Ω — 8.0 — Ω –2.3 –1.5 –1.0 TC2 = TC1 = VO, Ta = 25˚C –1.7 –1.3 –1.1 TC2 = VDD, TC1 = VO, Ta = 25˚C –1.1 –0.9 –0.8 –0.25 –0.1 –0.01 –0.5 –0.4 –0.3 –0.7 –0.6 –0.5 — — 2.
S1F76610 Series Typical Performance Characteristics 1000 Ta = 25°C VI = –5V VI = –3V VI = –2V fOSC [kHz] fOSC [kHz] 100 10 1 10 100 1000 10000 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 –40 VI = –5.0V VI = –3.0V VI = –2.0V –20 ROSC [kΩ] (1) Clock frequency vs. External resistance 0 20 40 Ta [°C] 60 80 100 (2) Clock frequency vs. Ambient temperature 150 0 Ta = 25°C Ta = 25°C VI = –5.
S1F76610 Series 0 0 Ta = 25°C VI = –3.0V ×2 multiplier –2 ×3 multiplier –10 –3 ×2 multiplier –4 ×3 multiplier –5 –15 10 20 –6 30 0 IO [mA] (5) Output voltage vs. Output current 1 2 3 4 5 6 IO [mA] 7 8 9 10 (6) Output voltage vs. Output current 100 60 90 90 90 54 80 80 80 48 70 70 ×2 multiplier 60 Peff 50 ×3 multiplier Peff 40 60 Ta = 25°C VI = –5.
S1F76610 Series 500 40 100 ×2 multiplier Peff 90 400 32 80 ×3 multiplier Peff 300 24 20 50 ×3 multiplier II 40 RO [Ω] 60 28 II [mA] Ta = 25°C VI = –2.0V 70 Peff [%] Ta = 25°C IO = 6mA 36 200 16 ×3 multiplier 12 30 ×2 multiplier II 20 ×2 multiplier 100 8 4 10 0 0 0 0 1 2 3 4 5 6 IO [mA] 7 8 9 –7 10 –6 –5 –4 –3 –2 –1 0 VI [V] (9) Multiplication efficiency/input current vs. Output current (10) Output impedance vs.
S1F76610 Series 100 –7.850 IO = 0.5mA IO = 1.0mA 90 VO = –15V IO = 2.0mA Ta = 25°C –7.900 VREG [V] Peff [%] IO = 4.0mA 80 S1F76610 Series 70 –7.950 Ta = 25°C 60 VI = – 3.0V –8.000 0.0001 50 1 10 100 1000 0.0010 0.0100 0.1000 IO [V] fOSC [kHz] (13) Multiplication efficiency vs. Clock frequency (14) Output voltage vs. Output current –2.850 –5.850 VO = –6V VO = –9V Ta = 25°C Ta = 25°C –5.900 VREG [V] VREG [V] –2.900 –2.950 –5.950 –6.000 0.0001 –3.000 0.0010 0.0100 0.
S1F76610 Series 50 Ta = 25°C 0.25 VO = –5V |VREG-VO| [V] 0.20 VO = –10V VO = –15V 0.15 0.10 0.05 0.00 100×|VREG(°C)|-|VREG(25°C)|/|VREG(25°C)| [%] 0.30 0 CT0 CT1 CT2 –50 0 5 10 IO [mA] 15 20 –40 (17) Regulator voltage vs. Output current –20 0 20 40 Ta [°C] 60 80 100 (18) Regulator output stability ratio vs.
S1F76610 Series FUNCTIONAL DESCRIPTIONS CR Oscillator The on-chip CR oscillator network frequency is determined by the external resistor, ROSC, connected between OSC1 and OSC2. This oscillator can be disabled in favor of an external clock by leaving OSC2 open and applying an external clock signal to OSC1. External clock OSC1 OSC1 VDD = 0 V External clock signal ROSC OSC2 The voltage multiplier uses the clock signal from the oscillator to double or triple the input voltage.
S1F76610 Series TYPICAL APPLICATIONS Voltage Tripler with Regulator The following figure shows the circuit required to triple the input voltage, regulate the result and add a temperature gradient of –0.4%/°C. Note that the high input impedance of RV requires appropriate noise countermeasures. Converting a Voltage Tripler to a Voltage Doubler To convert this curcuit to a voltage doubler, remove capacitor C2 and short circuit CAP2– to VO.
S1F76610 Series Serial Connection connection, however, this also raises the output impedance. In case of series connections, when connecting loads between the first stage VDD (or other potential of the second stage VDD or up) and the second stage V REG as shown in Fig. 2-13, be cautions about the following point.
S1F76610 Series Simultaneous Voltage Conversion Using an External Gradient Combining a standard voltage tripler circuit with one for positive voltage conversion generates both –15 and 8.2V outputs from a single input, however, it also raises the output impedance. A voltage doubler generates –10 and 3.8V outputs. The S1F7661C0B0/M0B0 offers three built-in temperature gradients— –0.1, –0.4 and –0.6%/°C.
S1F76540 Series DESCRIPTION • Input voltages The S1F76540C0A0/M0A0 is a CMOS process, charge-pumping DC/DC converter and voltage regulator featuring the very high efficiency but low power consumption. An addition of four, three, or two external capacitors can generate four-, three- or two-time output voltage in negative direction than the input voltage. Also, the built-in voltage regulator can set any output voltage of DC/DC converter and can output the regulated voltage using two external resistances.
S1F76540 Series BLOCK DIAGRAM VDD POFF1 POFF2 FC Reference voltage circuit Power-off control circuit Clock generator circuit TC1 TC2 RV Booster control circuit Voltage regulation circuit VREG VRI Voltage converter circuit VI C1P C1N C3N C2P VO C2N Figure 2.1 Block diagram PIN DESCRIPTIONS VO 1 16 C2P VRI 2 15 C2N VREG 3 14 C3N RV 4 13 C1N VDD 5 12 C1P FC 6 11 VI TC1 7 10 POFF1 TC2 8 9 POFF2 Figure 2.
S1F76540 Series Table 2.1 Pin descriptions Pad No.
S1F76540 Series Table 2.2 Absolute maximum ratings VDD reference Parameter Symbol Rating Unit Min. Max. Remarks Input power voltage VI –26.0/N VDD + 0.3 V N = Boost time VI pin Input pin voltage V1 VI – 0.3 VDD + 0.3 V POFF1, POFF2, TC1, TC2 and FC pins Output pin voltage 1 VOC1 VI – 0.3 VDD + 0.3 V C1P and C2P pins Output pin voltage 2 VOC2 2 × VI – 0.3 VI + 0.3 V C1N pin Output pin voltage 3 VOC3 3 × VI – 0.3 2 × VI + 0.
S1F76540 Series Figure 2.3 Potential relationship VCC (+5 V) System S1F76540 VDD (0 V) 5V VI (–5 V) (0 V) S1F76540 Series GND 10 V –10 V Two-time boosting 15 V –15 V Three-time boosting 20 V –20 V Four-time boosting ELECTRICAL CHARACTERISTICS Table 2.3 DC characteristics (1) Parameter Input power voltage Boost start input power voltage Symbol VI VSTA Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V unless otherwise noted Characteristics Min. –22/N –2.
S1F76540 Series Table 2.3 DC characteristics (2) Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V unless otherwise noted Parameter Boost output impedance Boost power conversion efficiency Booster operation current consumption 1 Booster operation current consumption 2 Regulator operation current consumption Symbol RO Peff IOPR1 IOPR2 IOPVR Characteristics Min. Typ. Max. Unit IO = 10 mA, VI = –5.0 V during 4-time boosting C1, C2, C3, CO = 10 µF (tantalum) 200 300 Ω IO = 10 mA, VI = –3.
S1F76540 Series Table 2.3 DC characteristics (3) Ta = –30°C to +85°C, VDD = 0 V, VI = –5.0 V unless otherwise noted Regulated output load variation Symbol Characteristics Min. VRI = –20 V, VREG = –15 V, ∆VO (*3) Ta = 25°C setup 0 < IREG < 20 mA Reference voltage (Ta = 25°C) Reference voltage temperature coefficient (*4, *5) 30 Max. Unit 50 mV VREF0 TC1 = VDD , TC2 = VDD –1.55 –1.50 –1.45 V VREF1 TC1 = VDD , TC2 = VI –1.70 –1.50 –1.30 V VREF2 TC1 = VI, TC2 = VDD –1.90 –1.50 –1.
S1F76540 Series Table 2.4 AC characteristics VDD = 0 V and VI = –5.0 V unless otherwise noted Parameter Internal clock frequency 1 Symbol fCL1 Conditions FC = VDD, POFF1 = VI POFF2 = VDD Pin used: C1P Internal clock frequency 2 fCL2 FC = VI, POFF1 = VI POFF2 = VDD Pin used: C1P Min. Typ. Max. Unit Ta = 25°C 3.0 4.0 6.0 kHz Ta = –30°C to +85°C 2.0 4.0 7.0 kHz Ta = 25°C 12.0 16.0 24.0 kHz Ta = –30°C to +85°C 8.0 16.0 28.
S1F76540 Series Capacitance vs. output impedance characteristic when 4X pressure is applied Load current = 10 mA, Ta = 25°C, C1 = C2 = C0 Capacitor used: Tantalum electrolytic capacitor 550 S1F76540 Series 500 Output impedance [Ω] 450 400 350 300 250 200 150 1 10 100 C [µF] VI = –3.0V FC = High VI = –3.0V FC = Low VI = –5.0V FC = High VI = –5.0V FC = Low Figure A1 Characteristic chart: Capacitance vs.
S1F76540 Series Voltage Converter The voltage converter, consisting of a boost control circuit and a voltage converter circuit, receives clocks from the clock generator circuit and boosts the input power voltage (VI) four, three or two times. During four-time boosting, however, the three-time and two- time boost outputs cannot be obtained simultaneously. Figure 2.4 gives the potential relationship during four-, three- and two-time boosting.
S1F76540 Series Reference Voltage Circuit The S1F76540 has a built-in reference voltage circuit for voltage regulation. The regulated voltage (explained in the next “voltage regulator circuit” section) is set depending on the division ratio between this refer- ence voltage and the external resistance. The reference voltage can be used to change the temperature coefficient at pins TC1 and TC2. One of four states can be selected as listed on Table 2.6.
S1F76540 Series R1 R2 1 VO C2P 16 2 VRI C2N 15 3 VREG C3N 14 4 RV C1N 13 5 VDD C1P 12 6 FC VI 11 7 TC1 POFF1 10 8 TC2 POFF2 9 Figure 2.
S1F76540 Series Changing the temperature coefficient: • The temperature coefficient of the regulated voltage depends on the temperature coefficient of the reference voltage (if the division ratio of setup resistors does not depend on the temperature). It is necessary to change the temperature coefficient using thermistors, resistors or others to set any other temperature coefficient of the regulated voltage. The following explains how to calculate the VREG voltage in temperature T.
S1F76540 Series Power-off Control Function The S1F76540 has the power-off function and turns on or off each circuit function when control signals are entered in the POFF1 and POFF2 pins from an external system (such as microprocessor) as defined on Table 2.7. This power-off function can also cut the reactive current in parallel connection and other application circuits.
S1F76540 Series CHARACTERISTICS GRAPH 200 300 280 180 140 120 100 240 S1F76540 Series Booster output impedance [Ω] Booster current consumption [µA] 260 160 220 200 180 160 80 140 60 40 120 100 0 1 2 3 4 5 7 6 1 Input voltage [V] 2 3 4 5 6 7 Input voltage [V] Input voltage (VI) vs. Booster circuit current consumption (IOPR) Input voltage (VI) vs. Booster output impedance (RO) Peff (%) VO (V) VO (V) VI = –3 V, Four-times Booster VI = –5 V, Four-times Booster 100.0 –12.
S1F76540 Series APPLICATION CIRCUIT EXAMPLES Four-time Booster and Regulator Figure 2.8 gives a wiring example of four-time booster and regulator that is the typical S1F76540 application. This example boosts the input voltage (VI ) four times in negative direction, and outputs the regulated voltage at VREG pin. CO + VREG CREG + R1 R2 1 VO C2P 16 2 VRI C2N 15 3 VREG C3N 14 4 RV C1N 13 5 VDD VDD 6 FC + CI C1P 12 + C2 C3 C1 + + VI 11 7 TC1 POFF1 10 8 TC2 POFF2 9 VI Figure 2.
S1F76540 Series 4-time Booster Only the booster circuit operates, and it boosts the input voltage (VI ) four times in negative direction and outputs it at the VO pin. As the regulator is not used, the voltage appearing at the VO pin may contain ripple components. Figure 2.9 gives a wiring example. CO + C2P 16 2 VRI C2N 15 3 VREG C3N 14 4 RV 5 VDD VDD 6 FC + CI C1N 13 C1P 12 + S1F76540 Series VO 1 VO C2 C3 C1 + + VI 11 7 TC1 POFF1 10 8 TC2 POFF2 9 VI Figure 2.
S1F76540 Series VRP VRP = IO 2 • fCL • CO + IO • RCOUT • • • • Equation (4) where, IO : Load current (A) fCL : Clock frequency (Hz) RCOUT : Serial equivalent resistance (Ω) of output capacitor CO Figure 2.10 Ripple waveforms ◊ Application in other setup conditions 1 When used in the High Output mode Connect the FC pin to the VI pin. Parallel Connection (for Increased Boosting) The parallel connection is useful for reduction of booster output impedance or reduction of ripple voltage.
S1F76540 Series ◊ Setup conditions of Figure 2.11 First stage • Internal clock : ON (Low Output mode) • Booster circuit : ON • Regulator : OFF Second stage • Internal clock : OFF • Booster circuit : ON • Regulator : ON (if CT = –0.04%/°C) • In Figure 2.11, when the POFF2 pin of the first-stage S1F76540 is set to low (VI), voltage boosting is stopped at the first and second stages. However, the regulator at the second stage does not stop.
S1F76540 Series ◊ Setup conditions of Figure 2.12 • Internal clock : ON (Low Output mode) • Booster circuit : ON • Regulator : ON (if CT = –0.04%/°C) VDD VI VI 4VI 6VI – (2∗VF) VO 6VI VO' 2∗VF Figure 2.13 Potential relationship during 6-time boosting using diodes ◊ Power-off procedure • Set the POFF1 pin to low (VI ) to turn off all circuits. ◊ Output voltages • When diodes are used for voltage boosting, the characteristics of diodes directly affect on the voltage boosting characteristics.
S1F76540 Series Positive Voltage Conversion The S1F76540 can also boost up a voltage to the positive potential using external diodes. In such case, however, the regulator function is unavailable. Figure 2.14 gives a wiring example for three-time positive boosting, and Figure 2.15 provides its electrical potential relationship.
S1F76540 Series ◊ Output voltages • When diodes are used for voltage boosting, the characteristics of diodes directly affect on the voltage boosting characteristics. The forward voltage drop (VF) of diodes can reduce the booster output voltage. As the example of Figure 2.14 uses three diodes, the drop of “VF” voltage multiplied by three occurs. The booster output voltage is expressed by equation (5). To increase the |VO'| value, use the diodes having a smaller VF.
S1F76540 Series ◊ Setup conditions of Figure 2.16 • Internal clock • Booster circuit • Regulator • Thermistor resistor : : : : ON (Low Output mode) ON ON RT ◊ Power-off procedure ◊ Regulator temperature coefficient • For the regulator setup and notes, see the “voltage regulator circuit” section of the function. • The thermistor resistor (RT) has the non-linear temperature characteristics. To correct them to the linear characteristics, insert the RP as shown Figure 2.16.
S1F76640 Series S1F76640 Series CMOS DC/DC Converter & Voltage Regulator DESCRIPTION FEATURES S1F76640 is a high efficiency and low power consumption CMOS DC/DC converter. It is roughly divided into two portions, step-up circuit and stabilization circuit. The step-up circuit can provide 2 times step-up outputs (3.6 to 11V), 3 times step-up outputs (5.4 to 16.5V) or 4 times step-up outputs (7.2 to 22V) of input voltages (1.8 to 5.5V).
S1F76640 Series BLOCK DIAGRAM VO VRI CAP1+ VDD OSC1 OSC2 S1F76640 Series RV POFF Temperature gradient selection circuit CAP1– Voltage stabilization circuit CAP2+ VREG Reference voltage generator CAP2– Voltage conversion circuit CAP3+ TC1 TC2 CR oscillator GND Step-up circuit Stabilization circuit Figure 3-1 Block Diagram S1F70000 Series Technical Manual EPSON 2–39
S1F76640 Series PIN ASSIGNMENTS SSOP2-16pin RV 1 16 VRI VREG 2 15 VO TC1 3 14 CAP3+ TC2 4 13 CAP2+ POFF 5 12 CAP2– (GND)VSS 6 11 CAP1+ OSC1 7 10 CAP1– OSC2 8 9 VDD Figure 4-2 Pin Assignments of SSOP2-16pin 2–40 EPSON S1F70000 Series Technical Manual
S1F76640 Series PIN DESCRIPTIONS Pin No. Pin name Description RV 2 VREG Stabilized voltage output pin 3 TC1 Temperature gradient selection pin 4 TC2 Temperature gradient selection pin 5 POFF VREG output ON/OFF control pin. When control signal from the system side is input to this pin, the power off (VREG output power off) control of S1F76640 becomes available. 6 GND Power supply pin (minus side, system GND) 7 OSC1 Oscillation resistor connection pin.
S1F76640 Series CHIP EXTERNAL SHAPE AND PAD CENTER COORDINATES Pad Center Coordinates Chip External Shape S1F7664D0A0 Pad + (0,0) X 2.60mm Y 2.30mm Figure 4-4 Pad Assignments (x) (y) (t) Chip size : 2.30mm × 2.60mm × 0.30mm PAD aperture : 100µm × 100µm DIE number : F76640D0A0 2–42 EPSON Pad Center Coordinates No. Name X[µm] Y[µm] 1 RV –984.0 1096.0 2 VREG 788.0 3 (TESTOUT) 580.0 4 TC1 390.0 5 TC2 96.0 6 POFF –218.0 7 GND –510.0 8 OSC1 –802.0 9 OSC2 –1094.
S1F76640 Series FUNCTIONAL DESCRIPTIONS CR Oscillator S1F76640 has a built-in CR oscillator as the internal oscillator, and an external oscillation resistor R OSC is connected between the pins OSC1 and OSC2 before operation. (Figure 5.
S1F76640 Series CAP3+=4VDD=20V Note 3 CAP2+=3VDD=15V CAP1+=2VDD=10V Note 2 Note 1 VDD=5V GND=0V VDD=5V GND=0V VDD=5V GND=0V Figure 5-5 Figure 5-4 Figure 5-3 Example of 2 times step-up Example of 3 times step-up Example of 4 times step-up potential relations potential relations potential relations Note 1 : Note 2 : Note 3 : At the 3 times step-up time, 2 times step-up output (–10V) cannot be taken out from the CAP2– pin.
S1F76640 Series Temperature Gradient Selection Circuit S1F76640 can provide three kinds of temperature gradients suitable for driving LCD to V REG output as shown Table 5-1. Table 5-1 Temperature Gradient Adaptation Table TC2 (Note 1) TC1 (Note 1) Temperature Gradient CT(Note 2) VREG Output CR Oscillator Remarks — 1(VDD) Low(VSS) Low(VSS) –0.40%/ ˚C ON ON — 1(VDD) Low(VSS) High(VO) –0.25%/ ˚C ON ON — 1(VDD) High(VO) Low(VSS) –0.55%/ ˚C ON ON — 1(VDD) High(VO) High(VO) –0.
S1F76640 Series ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Rating Parameter Symbol Input supply voltage Input pin voltage Output voltage Unit Remarks Min. Max. VDD GND-0.3 24/N V VDD N = 2 : 2 times step-up N = 3 : 3 times step-up N = 4 : 4 times step-up VI GND–0.3 VDD -0.3 V OSC1,POFF GND–0.3 VO-0.3 V TC1,TC2, RV GND–0.3 22 V VO Note 3 GND–0.3 VO V VREG Note 3 VO Output pin voltage 1 VOC1 GND–0.3 VDD–0.3 V CAP1+,CAP2+ OSC2 Output pin voltage 2 VOC2 GND–0.
S1F76640 Series Recommended Operating Conditions Parameter Symbol Step-up start voltage Rating Unit Remarks Max. VSTA1 1.8 — V ROSC=1MΩ, C4≥10µF CL/C4≤1/20 Note 2 VSTA2 2.2 — V ROSC=1MΩ Step-up stop voltage VSTP — 1.8 V ROSC=1MΩ Output load resistance RL RLmin Note 3) — Ω — Output load current IO — 20 mA — Oscillation frequency fOSC 10 30 kHz — External resistor for oscillation ROSC 680 2000 kΩ — 3.
S1F76640 Series Electrical Characteristics Unless otherwise specified, Ta=–40˚C to +85˚C GND=0V, VDD=5V Specification Value Parameter Symbol Input supply voltage Output voltage Measurement Unit Conditions Min. Typ. Max. VDD 1.8 — 5.5 V — — VO — — 22 V — — VREG VRV — 22 V R=∞, RRV=1MΩ, VO=22V 2 Stabilization circuit operating voltage VO VRV+2.
Note 1 : Note 2 : Note 3 : Note 4 : Note 5 : All voltage values are based on GND being 0V. The value shown here is the step-up circuit conversion efficiency, and (VO-VREG)IOUT is lost when the stabilization circuit operates. So, it is recommended to operate this so that (VO-VREG) becomes as small as possible. When (VO-VREG) × IO is large, the IC temperature rises and the characteristics of the stabilization circuit change. See Figures 6-5-14, 6-5-15 and 6-5-16. RSAT means inclination in Fig.
S1F76640 Series Input leak current measurement circuit 2–50 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 A EPSON Connection to each measurement pin S1F70000 Series Technical Manual
S1F76640 Series CHARACTERISTICS GRAPH 30 1000 Ta=25˚C 28 V DD =5V 26 24 V DD =3V V DD =2V 10 V DD =5V 22 20 S1F76640 Series fosc[kHz] fosc[kH Z ] 100 18 16 14 12 10 100 1000 Rosc[kΩ] 10000 -40 V DD =3V -20 0 20 40 60 80 100 Ta[˚C] (1) Oscillation frequency vs. External resistance for oscillation (2) Oscillation frequency vs. Temperature 20 200 Ta=25˚C C1=C2=2.
S1F76640 Series 12 8 4 times step-up 6 3 times step-up V O [V] 8 V O [V] 4 times step-up 7 10 6 3 times step-up 5 4 3 4 2 Ta=25˚C V DD =3V C1 to C4=10µF 2 2 times step-up Ta=25˚C V DD =3V C1 to C4=10µF 1 0 0 0 5 10 I O [mA] 15 20 0 (5) Output voltage (VO) vs. Output current 2 1 2 3 4 700 600 600 500 7 8 9 10 500 4 times step-up R O [Ω] 4 times step-up R O [Ω] 5 6 I O [mA] (6) Output voltage (VO) vs.
S1F76640 Series 100 90 120 80 70 3 times step-up I DD 60 2 times step-up I DD Peff[%] 50 30 90 80 80 50 10 40 10 20 30 30 0 5 10 I O [mA] 100 90 80 70 30 3 times step-up Peff 4 times step-up I DD 40 20 3 times step-up I DD 30 20 0 0 1 2 I O =2mA 50 I O =10mA 40 I O =5mA 3 4 5 6 I O [mA] 7 8 20 10 I O =20mA Ta=25˚C V DD =5V C1 to C4=10µF 10 0 0 9 10 (11) Step-up power conversion efficiency vs. Output current 3 Input current vs.
S1F76640 Series 100 100 90 90 80 80 I O =2mA 70 Peff[%] Peff[%] 60 I O =5mA 50 I O =10mA 40 60 50 30 20 20 Ta=25˚C V DD =3V C1 to C4=10µF 10 0 10 100 I O =5mA Ta=25˚C V DD =2V C1 to C4=10µF 10 0 1000 1 10 fosc[kHz] 1000 (14) Step-up power conversion efficiency vs. Oscillation frequency 3 1.8 0.5 Ta=25˚C C1 to C4=10µF R OSC =1MΩ 1.7 V O =20V 0.4 1.6 1.5 V REG –V O [V] V STA1 [V] 100 fosc[kHz] (13) Step-up power conversion efficiency vs. Oscillation frequency 2 1.4 1.
S1F76640 Series 7.95 5.95 7.90 S1F76640 Series V REG [V] 6.00 V REG [V] 8.00 5.90 Ta=25˚C V O =20V Ta=25˚C V O =12V 7.85 5.85 0.1 1.0 10.0 100.0 0.1 1.0 I REG [mA] (18) Output voltage (VREG) vs. Output current 2 4.00 V REG (Ta)–V REG (25˚C) ––––––––––––––––––––––– ×100[V] V REG (25˚C) 50 V REG [V] 3.95 3.90 Ta=25˚C V O =8V 1.0 10.0 40 30 20 10 0 –10 C T1 C T0 –20 –30 C T2 –40 –50 –40 –20 100.0 0 20 40 60 80 100 Ta[˚C] I REG [mA] (19) Output voltage (VREG) vs.
S1F76640 Series MECHANICAL DATA Reference Unit : mm Plastic SSOP2-16pin 7Max. (0.275Max.) 6.6±0.2 (0.260+0.007 –0.008 ) 16 INDEX 6.2±0.3 (0.244±0.011) 4.4±0.2 (0.173 +0.008 –0.007 ) 9 0˚ 10˚ 8 1.5±0.1 (0.059±0.003) 1.7Max. (0.066Max.) 1 0.8 (0.031) Note : 2–56 0.36±0.1 (0.014+0.004 –0.003) 0.05 (0.002) 0.15±0.05 (0.006+0.003 –0.002 ) 0.4 (0.016) +0.007 0.5±0.2 (0.02 –0.008 ) 0.9(0.035) This dimensional drawing is subject to change without notice for improvement.
S1F76640 Series APPLICATION EXAMPLE 2 Times Step-up, 3 Times Step-up and 4 Times Step-up VI 1 RV VRI 16 2 VREG VO 15 3 TC1 CAP3+ 14 4 TC2 CAP2+ 13 5 POFF CAP2– 12 6 VSS CAP1+ 11 7 OSC1 CAP1– 10 8 OSC2 VDD 9 S1F76640 Series Figure 8.1 shows the connection for getting 4 times step-up output of an input voltage by operating the step-up circuit only. In case of 3 times step-up, the capacitor C3 is removed and CAP3+ (Pin No. 14) is short-circuited to VO (Pin No.
S1F76640 Series Parallel Connection It is possible to make the output impedance RO small when several pieces of the circuit shown in Figure 8.1 are connected. Parallel connection of n circuits reduces RO to 1/n approximately. One piece of the smoothing capacitor C4 can be commonly used in the same way. To get stabilized outputs after parallel connection, include 1 pieces of the circuit shown in Figure 8.2 in the parallel connection of n circuits as shown in Figure 8.3.
Note 1 : Note 2 : Precautions on Load Connection When a load is connected between GND in the first stage (or potential below GND in the second stage other than that) and VREG in the second stage as shown in Figure 8.4, pay attention to the following.
S1F76640 Series Negative Voltage Conversion S1F76640 can boost input voltage to negative power on the negative potential side by using the circuit shown in Figure 8.6. (In case of 3 times step-up, remove the capacitor C3 and the diode D4 and short-circuit the both ends of D4. In case of 2 times step-up, remove the capacitor C2 and the diode D3 and short-circuit the both ends of D3.) But the output voltage drops by the forward voltage VF of the diode. When GND is 0V, VDD is 5V and VF is 0.
S1F76640 Series Example of Temperature Gradient Change by External Temperature Sensor (Thermistor) VREG RT RP R1 RRV 1 RV 16 2 VREG 15 3 14 4 13 5 12 6 VSS 11 7 10 8 9 S1F76640 Series S1F76640 has a temperature gradient selection circuit inside the stabilization circuit, and three kinds of temperature gradients, –0.20%/˚C, –0.40%/˚C and –0.60%/˚C, can be selected as the VREG output.
S1F76640 Series Configuration Example of Voltage Stabilized Output (VREG) Electronic Volume Circuit Voltage stabilized output (VREG) + – + – + – + – 16 VRI RV 1 15 VO VREG 2 14 CAP3+ TC1 3 VSS or VO 13 CAP2+ TC2 4 VSS or VO 12 CAP2– POFF 5 11 CAP1+ VSS 6 10 CAP1– OSC1 7 9 VDD OSC2 8 (74HC4051) 13 14 15 12 1 5 2 4 XPOF (VDD/VSS) 16 IN0 3 IN1 COM IN2 IN3 IN4 IN5 IN6 A 11 IN7 B 10 C 9 6 INH CTRL0 CTRL1 CTRL2 VCC VEE VSS 7 8 Negative voltage input Positive voltage input Figure 8.
S1F76640 Series Configuration Example of High Magnification Step-up Circuit with Diode 1 RV VRI 16 2 VREG VO 15 VSS or VO 3 TC1 CAP3+ 14 VSS or VO 4 TC2 CAP2+ 13 5 POFF CAP2– 12 6 VSS CAP1+ 11 7 OSC1 CAP1– 10 8 OSC2 VDD 9 + C4 – + – C2 + – C1 + – C3 S1F76640 Series S1F76640, if an external diode is attached, can realize 5 times or more step-up operation and voltage stabilized output.
3.
S1F78100Y Series S1F78100Y Series CMOS Positive Voltage Regulators FEATURES SCI78100Y Series is a fixed type positive voltage regulator developed by using the CMOS silicon gate process and is composed of a low current consumption reference voltage circuit, a differential amplifier, an output control transistor and a voltage setting resistor. The output voltage is fixed inside the IC, and various standard voltage parts are available. The package is a SOT89-3pin plastic package.
S1F78100Y Series PIN DESCRIPTIONS Pin No.
S1F78100Y Series FUNCTIONAL DESCRIPTIONS S1F78100Y Series is a fixed positive output type voltage regulator of series regulator system and is fitted with an output control MOS transistor between the input and output pins as shown in the figure below.
S1F78100Y Series LINEUP Output Voltage Product S1F78100Y2A0 Min. Typ. Max. 5.75 6.00 6.25 S1F78100Y2B0 4.90 5.00 5.10 S1F78100Y2M0 4.40 4.50 4.60 S1F78100Y2P0 3.90 4.00 4.10 S1F78100Y2K0 3.80 3.90 4.00 S1F78100Y2N0 3.43 3.50 3.57 S1F78100Y2T0 3.23 3.30 3.37 S1F78100Y2C0 3.13 3.20 3.27 S1F78100Y2D0 2.93 3.00 3.07 S1F78100Y2R0 2.73 2.80 2.87 S1F78100Y2L0 2.53 2.60 2.67 S1F78100Y2F0 2.15 2.20 2.25 S1F78100Y2G0 1.75 1.80 1.85 S1F78100Y2H0 1.45 1.50 1.
S1F78100Y Series ABSOLUTE MAXIMUM RATINGS Symbol Rating V DD–VSS 21 Output voltage VO VDD+0.3 to VSS -0.3 Output current IO 100 mA Allowable loss PD 200 mW Topr –40 to +85 Tstg –65 to +150 Tsol 260 • 10 (at leads) Input voltage Operating temperature Storage ambient temperature Soldering temperature and time Unit V ˚C S1F78100Y Series Parameter ˚C • s RECOMMENDED OPERATING CONDITIONS Parameter Input voltage Output current S1F70000 Series Technical Manual Symbol Min. Typ.
S1F78100Y Series ELECTRICAL CHARACTERISTICS S1F78100Y2A0 (Unless otherwise specified, Ta ranges from –40˚C to +85˚C.) Parameter Symbol Conditions (VSS=0.0V) Input voltage VI — Output voltage VO VDD=8.0V, IO=–10mA Ta=25˚C Min. Typ. Max. Unit — — 15 V 5.75 6.00 6.25 V VDD=6.0V to 15.0V, No load — 3.0 8.0 µA VO=6.0V, IO=–10mA — 0.24 0.38 V — 0 +100 +200 ppm/˚C ∆VO ∆VI · VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=7.0V to 15.0V IO=–10mA — 0.
S1F78100Y Series S1F78100Y2M0 Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 4.40 4.50 4.60 V V DD=4.5V to 15.0V, No load — 3.0 8.0 µA V O=4.5V, IO= –10mA — 0.26 0.42 V — 0 +100 +200 ppm/˚C ∆VO ∆V I · VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=6.0V to 15.0V I O= –10mA — 0.1 — %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=6.0V I O= –1mA to –40mA — 40 — mV Supply voltage rejection ratio P SRR V DD=6.
S1F78100Y Series S1F78100Y2K0 (Unless otherwise specified, Ta ranges from –40˚C to +85˚C.) Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 3.80 3.90 4.00 V VDD=3.9V to 15.0V, No load — 3.0 8.0 µA VO=3.9V, IO=–10mA — 0.27 0.44 V — 0 +100 +200 ppm/˚C ∆VO ∆VI · VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=5.0V to 15.0V IO=–10mA — 0.1 — %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=6.
S1F78100Y Series S1F78100Y2T0 Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 3.23 3.30 3.37 V V DD=3.3V to 15.0V, No load — 3.0 8.0 µA V O=3.3V, IO= –10mA — 0.30 0.50 V — 0 +100 +200 ppm/˚C ∆VO ∆V I · VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=4.0V to 15.0V I O= –10mA — 0.1 – %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=5.0V I O= –1mA to –30mA — 30 – mV Supply voltage rejection ratio P SRR V DD=5.
S1F78100Y Series S1F78100Y2D0 (Unless otherwise specified, Ta ranges from –40˚C to +85˚C.) Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 2.93 3.00 3.07 V VDD=3.0V to 15.0V, No load — 3.0 8.0 µA VO=3.0V, IO=–10mA — 0.31 0.52 V — 0 +100 +200 ppm/˚C ∆VO ∆VI · VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=4.0V to 15.0V IO=–10mA — 0.1 — %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=5.
S1F78100Y Series S1F78100Y2L0 Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 2.53 2.60 2.67 V V DD=2.6V to 15.0V, No load — 3.0 8.0 µA V O=2.6V, IO= –10mA — 0.33 0.56 V — 0 +100 +200 ppm/˚C ∆VO ∆V I · VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=4.0V to 15.0V I O= –10mA — 0.1 — %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) V DD=5.0V I O= –1mA to –40mA — 30 — mV Supply voltage rejection ratio P SRR V DD=5.
S1F78100Y Series S1F78100Y2G0 (Unless otherwise specified, Ta ranges from –40˚C to +85˚C.) Parameter Symbol Conditions (VSS=0.0V) Min. Typ. Max. Unit — — 15 V 1.75 1.80 1.85 V VDD=2.2V to 15.0V, No load — 3.0 8.0 µA VO=1.8V, IO=–1mA — 0.075 0.18 V — 0 +100 +200 ppm/˚C ∆VO ∆VI · VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=3.0V to 15.0V IO=–10mA — 0.1 — %/V Load stability ∆VO Ta= –30˚C to +85˚C (Same temperature condition) VDD=3.
S1F78100Y Series Note : Circuit Diagram for Measuring Supply Voltage Rejection Ratio Characteristic fin=50kHz VDD S1F78100Y Series VO VDD CL CL=10µF S1F70000 Series Technical Manual EPSON IL S1F78100Y Series VSS IL=10mA 3–13
S1F78100Y Series EXAMPLE OF REFERENCE EXTERNAL CONNECTION S1F78100Y Series (2pin) (3pin) VO VDD Input voltage CIN Output voltage COUT VSS (1pin) MECHANICAL DATA S1F78100Y SOT89-3pin Reference 4.5±0.1 0.48Max. 0.44Max. 1.5 1.5±0.1 1.5 3 0.44Max. 2 0.8Min. 1 4.25Max. 2.5±0.1 0.4 1.8Max. 0.48Max. 0.53Max.
S1F78100Y Series CHARACTERISTICS GRAPH S1F78100Y2B0 IOPR–Ta IOPR–VI 7.0 6.0 6.0 VDD=7V Ta=25˚C IO=0mA 5.0 5.0 3.0 2.0 2.0 1.0 1.0 0.0 –40 3.0 S1F78100Y Series 4.0 IOPR [µA] IOPR [µA] 4.0 –20 0 20 40 Ta [˚C] 60 80 0.0 100 0 5 (VO–VI)–Ta 2.0 1.8 1.8 VDD=4.9V 1.6 1.6 IO = –50mA Ta=25˚C VDD=4.9V 1.4 (VI–VO)[V] 1.4 (VO–VI)[A] 15 (VI–VO)–IO 2.0 1.2 1.0 0.8 IO = –10mA 0.6 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0.
S1F78100Y Series VO–Ta VO–VI 6.0 5.5 IO=–10mA VDD=7V 5.0 VO [V] VO [V] 4.0 5.0 3.0 IO = –50mA 2.0 Ta=25˚C 1.0 4.5 –40 –20 0 20 40 Ta [˚C] 60 80 0.0 100 ∆VO–Ta 10 15 VO–IO 5.5 5.3 VDD=7V –50mA≤IO≤–1mA VO [V] ∆VO [mV] 5 VI [V] 40 30 0 20 Ta=25˚C VDD=7V 5.1 4.9 10 4.7 0 –40 3–16 –20 0 20 40 Ta [˚C] 60 80 100 EPSON 4.
S1F78100Y Series S1F78100Y2G0 IOPR–Ta 7.0 6.0 IOPR–VI 6.0 VDD=3V 5.0 5.0 3.0 2.0 2.0 Ta=25˚C IO=0mA 1.0 1.0 0.0 –40 3.0 –20 0 20 40 Ta [˚C] 60 80 0.0 100 0 5 (VI–VO)–Ta 15 (VI–VO)–IO 2.0 0.9 1.8 VDD=1.75V 0.8 Ta=25˚C VDD=1.75V 1.6 0.7 1.4 (VI–VO)[V] (VO–VI)[V] 10 VI [V] 1.0 0.6 IO = –5mA 0.5 0.4 0.3 1.2 1.0 0.8 0.6 IO = –1mA 0.2 0.4 0.1 0.2 0.0 –40 S1F78100Y Series 4.0 IOPR [µA] IOPR [µA] 4.
S1F78100Y Series VO–VI VO–Ta 2.0 2.0 1.8 VDD=3V 1.6 IO = –10mA 1.4 VO [V] VO [V] 1.2 1.0 0.8 IO = –30mA 0.6 Ta=25˚C 0.4 IO =–1mA 0.2 1.5 –40 0.0 –20 0 20 40 Ta [˚C] 60 80 0 100 ∆VO–Ta 15 VO–IO 2.5 Ta=25˚C VDD=3V VDD=3V –10mA≤10≤–1mA 3 VO [V] ∆VO [mV] 10 VI [V] 5 4 5 2.0 2 1 0 –40 3–18 –20 0 20 40 Ta [˚C] 60 80 100 EPSON 1.
S1F78100Y Series S1F78100Y2H0 IOPR–Ta 7.0 IOPR–VI 6.0 6.0 5.0 VDD=3V 5.0 3.0 2.0 2.0 Ta=25˚C IO=0mA 1.0 1.0 0.0 –40 3.0 S1F78100Y Series 4.0 IOPR [µA] IOPR [µA] 4.0 –20 0 20 40 Ta [˚C] 60 80 0.0 100 0 5 (VO–VI)–Ta 1.2 10 15 VI [V] (VO–VI)–IO 1.1 VDD=1.45V 1.0 1.0 0.9 0.8 0.7 IO=–3mV (VI–VO)[V] (VO–VI)[V] 0.8 0.6 0.4 0.6 0.5 0.4 0.3 IO = –1mV Ta=25˚C VDD=1.45V 0.2 0.2 0.1 0.0 –40 –20 S1F70000 Series Technical Manual 0 20 40 Ta [˚C] 60 80 100 0.
S1F78100Y Series VO–Ta VO–VI 2.0 2.0 1.8 VDD=3V IO=–1mA 1.6 1.2 VO [V] VO [V] 1.4 1.5 1.0 IO = –30mA 0.8 0.6 0.4 IO = –10mA 0.2 1.0 –40 0.0 –20 0 20 40 Ta [˚C] 60 80 100 0 ∆VO–Ta 1.8 VO [ V] ∆VO [mV] 3–20 Ta=25˚C VDD=3V 1.6 2 1.4 1 1.2 0 20 40 Ta [˚C] 15 VO–IO VDD=3V 1mA≤IO≤30mA –20 10 2.0 3 0 –40 5 VI [V] 5 4 Ta=25˚C 60 80 100 EPSON 1.
S1F79100Y Series S1F79100Y Series CMOS Negative Voltage Regulators S1F79100Y series voltage regulators provide stepdown and stabilization for an input voltage to a specified fixed voltage. The four devices in the series incorporate a precision, power-saving reference voltage generator, a transistorized differential amplifier and resistors for determining the output voltage. The S1F79100Y series is available in 3-pin plastic SOT89s. FEATURES • Ample lineup : 5 kinds are available in the range from –1.
S1F79100Y Series PIN DESCRIPTIONS Pin No. Pin name 1 VI 2 GND 3 VO Description Input voltage Ground Output voltage SPECIFICATIONS Absolute Maximum Ratings Parameter Symbol Rating Unit VI–GND –21 V Output voltage VO GND + 0.3 to VI – 0.3 V Output current IO 100 mA Power dissipation PD 200 mW Operating temperature range Topr –40 to +85 °C Storage temperature range Tstg –65 to +150 °C Soldering temperature (for 10 s). See note.
S1F79100Y Series S1F79100Y1G0 (VDD = 0V, Ta = –40°C to +85°C unless otherwise noted) Symbol Conditions Input voltage VI — Output voltage VO Operating current Input/output voltage differential Input voltage stabilization ratio Output voltage drift VI = –3.0V, IO = 10mA Ta = 25°C Rating Min. Typ. –15.0 — Max. — –1.87 –1.80 –1.73 Unit V V VI = –1.8V to –15.0V — 4.0 18.0 µA |VI – VO| VI = –1.8V, IO = 10mA — 0.35 0.70 V ∆VO ∆VI • VO VI = –3.0V to –15.0V, IO = 10mA, Isothermal — 0.
S1F79100Y Series S1F79100Y1P0 Parameter Symbol Input voltage VI Output voltage VO Operating current IOPR (VDD = 0V, Ta = –40°C to +85°C unless otherwise noted) Rating Conditions Unit Min. Typ. Max. — –15.0 — — V VI = –6.0V, IO = 10mA –4.10 –4.00 –3.90 V Ta = 25°C VI = –4.0V to –15.0V — 4.0 18.0 µA — 0.19 0.38 V — 0.10 — %/V — 40.0 — mV Input/output voltage differential |VI – VO| VI = –4.0V, IO = 10mA Input voltage stabilization ratio ∆VO ∆VI • VO VI = –5.
S1F79100Y Series Typical Performance Characteristics S1F79100Y1B0 6.0 7.0 6.0 5.0 5.0 4.0 IOPR [µA] IOPR [µA] Ta = 25˚C IO = 0mA VI = 7V 4.0 3.0 3.0 2.0 1.0 1.0 0.0 –40 –20 0.0 0 20 40 60 80 0 100 –5 –10 Ta [˚C] VI [V] IOPR vs. Ta IOPR vs. VI 1.2 –15 0.8 VI = 4.9V Ta = 25˚C VI = –4.9V 0.7 1.0 0.6 IO = 50mA |VI–VO| [V] |VO–VI| [V] 0.8 0.6 0.4 0.5 0.4 0.3 0.2 0.2 IO = 10mA 0.0 –40 –20 0.1 0.0 0 20 40 60 80 100 0 20 30 40 50 IO [mA] Ta [˚C] |VO – VI| vs.
S1F79100Y Series –6.0 –5.5 VI = –7V IO = 10mA IO = 10mA –5.0 VO [V] VO [V] –4.0 –5.0 –3.0 –2.0 IO = 50mA –1.0 Ta = 25˚C –4.5 –40 –20 0.0 0 20 40 60 80 100 0 –5 Ta [˚C] –10 –15 VI [V] VO vs. Ta VO vs. VI –5.5 40 Ta = 25˚C VI = –7V VI = –7V 1mA ≤ IO ≤ 50mA VO [V] ∆VO [mV] 30 20 –5.0 10 0 –40 –20 –4.5 0 20 40 60 80 100 Ta [˚C] 10 20 30 40 50 IO [mA] ∆VO vs. Ta 3–26 0 VO vs.
S1F79100Y Series S1F79100Y1P0 6.0 7.0 6.0 5.0 5.0 4.0 IOPR [µA] IOPR [µA] Ta = 25˚C IO = 0mA VI = –7V 4.0 3.0 3.0 2.0 2.0 0.0 –40 –20 0.0 0 20 40 60 80 100 0 –5 –10 Ta [˚C] VI [V] IOPR vs. Ta IOPR vs. VI 1.2 –15 0.8 VI = –3.9V Ta = 25˚C VI = –3.9V 0.7 1.0 0.6 |VI–VO| [V] |VO–VI| [V] 0.8 0.6 IO = 30mA 0.4 0.5 0.4 0.3 0.2 0.2 IO = 10mA 0.0 –40 –20 0.1 0.0 0 20 40 60 80 100 8 16 24 32 40 IO [mA] Ta [˚C] |VO – VI| vs.
S1F79100Y Series –6.0 –4.5 VI = –7V IO = 10mA –5.0 IO = 10mA VO [V] VO [V] –4.0 –4.0 –3.0 –2.0 –1.0 –3.5 –40 –20 IO = 50mA 0 20 40 60 80 100 Ta = 25˚C IO = 30mA 0.0 0 –5 Ta [˚C] –10 –15 VI [V] VO vs. Ta VO vs. VI –4.5 40 VI = –7V 1mA ≤ IO ≤ 30mA Ta = 25˚C VI = –7V VO [V] ∆VO [mV] 30 20 –4.0 10 0 –40 –20 –3.5 0 20 40 60 80 100 Ta [˚C] 8 16 24 32 40 IO [mA] ∆VO vs. Ta 3–28 0 VO vs.
S1F79100Y Series S1F79100Y1D0 6.0 7.0 6.0 5.0 5.0 4.0 IOPR [µA] IOPR [µA] Ta = 25˚C IO = 0mA VI = –5V 4.0 3.0 3.0 2.0 2.0 0.0 –40 –20 0.0 0 20 40 60 80 100 0 –5 –10 Ta [˚C] VI [V] IOPR vs. Ta IOPR vs. VI 1.2 –15 0.8 VI = –2.93V Ta = 25˚C VI = –2.93V 0.7 1.0 0.6 |VI–VO| [V] |VO–VI| [V] 0.8 IO = 30mA 0.6 0.4 0.5 0.4 0.3 0.2 0.2 IO = 10mA 0.1 0.0 –40 –20 0.0 0 20 40 60 80 100 0 Ta [˚C] 12 18 24 30 IO [mA] |VO – VI| vs.
S1F79100Y Series –3.5 –6.0 VI = –5V IO = 10mA –5.0 VO [V] VO [V] –4.0 –3.0 IO = 10mA –3.0 –2.0 –1.0 IO = 30mA –2.5 –40 –20 Ta = 25˚C 0.0 0 20 40 60 80 0 100 –5 –10 –15 VI [V] Ta [˚C] VO vs. Ta VO vs. VI –3.5 40 VI = –5V 1mA ≤ IO ≤ 30mA Ta = 25˚C VI = –5V VO [V] ∆VO [mV] 30 20 –3.0 10 0 –40 –20 –2.5 0 20 40 60 80 100 6 12 18 24 30 IO [mA] Ta [˚C] ∆VO vs. Ta 3–30 0 VO vs.
S1F79100Y Series S1F79100Y1G0 6.0 7.0 5.0 4.0 IOPR [µA] IOPR [µA] Ta = 25˚C IO = 0mA 5.0 4.0 3.0 3.0 2.0 2.0 1.0 1.0 0.0 –40 –20 0.0 0 20 40 60 80 100 0 –5 –10 Ta [˚C] VI [V] IOPR vs. Ta IOPR vs. VI 1.2 –15 0.8 VI = –1.75V Ta = 25˚C VI = –1.75V 0.7 1.0 0.6 |VI–VO| [V] |VO–VI| [V] 0.8 0.6 0.4 0.0 0 20 40 60 80 100 0 2 4 6 8 10 IO [mA] Ta [˚C] |VO – VI| vs. Ta S1F70000 Series Technical Manual 0.3 0.1 IO = 1mA 0.0 –40 –20 0.4 0.2 IO = 5mA 0.2 0.
S1F79100Y Series –2.5 –6.0 VI = –3V IO = 1mA –5.0 VO [V] VO [V] –4.0 –2.0 –3.0 IO = 10mA –2.0 –1.0 IO = 50mA Ta = 25˚C IO = 30mA –1.5 –40 –20 0.0 0 20 40 60 80 100 0 –5 –10 Ta [˚C] –15 VI [V] VO vs. Ta VO vs. VI –2.5 40 VI = –3V 1mA ≤ IO ≤ 10mA Ta = 25˚C VI = –3V VO [V] ∆VO [mV] 30 20 –2.0 10 0 –40 –20 0 20 40 60 80 100 Ta [˚C] 0 2 4 6 8 10 IO [mA] ∆VO vs. Ta 3–32 –1.5 VO vs.
S1F79100Y Series S1F79100Y1H0 6.0 7.0 Ta = 25˚C IO = 0mA VI = –3V 6.0 5.0 4.0 IOPR [µA] 4.0 3.0 3.0 2.0 2.0 1.0 1.0 0.0 –40 –20 0.0 0 20 40 60 80 100 0 –5 –10 Ta [˚C] VI [V] IOPR vs. Ta IOPR vs. VI 1.2 –15 0.8 VI = –1.45V Ta = 25˚C VI = –1.45V 0.7 1.0 0.6 |VI–VO| [V] |VO–VI| [V] 0.8 0.6 0.4 IO = 5mA 0.3 0.1 IO = 1mA 0.0 0 20 40 60 80 100 0 2 4 6 8 10 IO [mA] Ta [˚C] |VO – VI| vs. Ta S1F70000 Series Technical Manual 0.4 0.2 0.2 0.0 –40 –20 0.
S1F79100Y Series –6.0 –2.0 VI = –3V IO = 1mA –5.0 VO [V] VO [V] –4.0 –1.5 –3.0 –2.0 IO = 1mA –1.0 –1.0 –40 –20 IO = 30mA Ta = 25˚C IO = 10mA 0.0 0 20 40 60 80 0 100 –5 –10 –15 VI [V] Ta [˚C] VO vs. Ta VO vs. VI –2.0 40 VI = –3V 1mA ≤ IO ≤ 10mA Ta = 25˚C VI = –3V VO [V] ∆VO [mV] 30 20 –1.5 10 0 –40 –20 –1.0 0 20 40 60 80 100 Ta [˚C] 2 4 6 8 10 IO [mA] ∆VO vs. Ta 3–34 0 VO vs.
S1F79100Y Series PACKAGE MARKINGS Parameter Output voltage code Voltage regulator code Code Description B 5V D 3V P Positive N Negative Marking locations Note The reflow furnace temperature profile requirements must be satisfied during package reflow. Avoid soldering on surface mount package (including SOT89) as it causes a quick temperature change of package and a device damage.
S1F79100Y Series Differential amplifier The built-in differential amplifier generates a potential at point X that adjusts the gate bias of the output transistor if there is any difference betweeen VREF and VREG. VSS Output transistor The output side of the p-channel MOS transistors in the output transistor circuit is connected to the voltage divider resistors in the feedback loop.
S1F79100Y Series R1 helps reduce the affect of I SS on V F. It is also required when ISS is lower than the diode bias current. For certain input voltages, a Zener diode with the reverse polarity can be used. Switching Output S1F79100Y series devices are designed for continuous operation. An external switching circuit allows the regulated output to be switched ON and OFF. High Input Voltages A preliminary regulator circuit is required to bring the input voltage within the S1F79100Y series rated range.
4.
S1F76300 Series The S1F76300 series of CMOS switching regulators comprises nine series—the S1F76310, S1F76380 series featuring built-in RC oscillators, the S1F76330 series requiring external crystal oscillators. S1F76310, S1F76380 Series Built-in CR Oscillator Type CMOS Switching Regulators The S1F76310, S1F76380 series of CMOS switching regulators provide input voltage step-up and regulation to a specified fixed voltage using an external coil.
S1F76300 Series BLOCK DIAGRAMS S1F76310 Series RST PWCR VI2 VI1 VSW Reference voltage generator CR oscillator VO Control switch GND PS S1F76380 Series RST PWCR VI VSW – + VO – + Reference voltage generator Control switch VCONT GND CR oscillator PS 4–2 EPSON S1F70000 Series Technical Manual
S1F76300 Series PIN ASSIGNMENTS S1F76310 Series PWCR 1 RST 2 GND 3 VSW 4 S1F76380 Series S1F76310 series 8 PS PWCR 1 7 VI1 RST 2 6 VI2 GND 3 5 VO VSW 4 S1F76380 series 8 PS 7 VI 6 VCONT 5 VO PIN DESCRIPTIONS S1F76310 Series Pin No. Pin name Description 1 PWCR 2 RST Reset signal output. See note 1. 3 GND Ground 4 VSW External inductor drive 5 VO Output votlage 6 VI2 Backup input voltage 7 VI1 Step-up input voltage 8 PS Power save. See note 2.
S1F76300 Series SPECIFICATIONS Absolute Maximum Ratings S1F76310 series Parameter VSS = 0V, Ta = 25 ˚C Symbol Rating Unit Input voltage VI1 7 V Output current IO 100 mA Output voltage VO 7 V Power dissipation PD 200 (SOP3) 300 (DIP) mW Operating temperature range Topr –30 to +85 ˚C Storage temperature range Tstg –65 to +150 ˚C Soldering temperature (for 10 s). See note.
S1F76300 Series Electrical Characteristics S1F76310M1L0 VSS = 0V, Ta = 25 ˚C unless otherwise noted Symbol Output voltage Detection voltage Detection voltage hysteresis ratio Operating current Standby current VI1 VI2 VO VDET ∆VDET IDDO IDDS Switching transistor ON resistance RSWON Switching transistor leakage current ISWQ Input voltage Backup switch ON resistance RBSON Backup switching leakage current IBSQ RST Low-level output current PS pull-up current Multiplication clock frequency IOL IIH
S1F76300 Series S1F76310M1K0 VSS = 0V, Ta = 25 ˚C unless otherwise noted Parameter Symbol VI1 VI2 Input voltage Output voltage Detection voltage VO V DET Detection voltage hysteresis ratio ∆VDET Operating current Standby current IDDO IDDS Switching transistor ON resistance R SWON Switching transistor leakage current ISWQ Backup switch ON resistance Backup switching leakage current R BSON IBSQ RST Low-level output current IOL PS pullup current Multiplication clock frequency fCLK IIH Condi
S1F76300 Series S1F76380M1H0 VSS = 0V, Ta = 25 ˚C unless otherwise noted Input voltage Output voltage Output voltage temperature gradient Detection voltage Detection voltage hysteresis ratio Operating current Standby current Symbol VI1 VO Condition Vl1 = 1.5V Kt VDET –5.5 1.00 ∆VDET IDDO IDDS Switching transistor ON resistance RSWON Switching transistor leakage current ISWQ VI1 = 1.5V, IO = 1.0mA VI1 = 1.5V VI1 = 1.5V, VO = 2.2V, VSW = 0.2V VI1 = 1.5V, VO = 1.5V, VSW = 7.
S1F76300 Series Typical Performance Characteristics 5 Ta = 25 ˚C VI1 = 1.5 V Standby current (µA) Fixed output voltage temperature characteristic (mV/ ˚C) 2.0 1.5 1.0 0.5 4 3 2 1 0.0 0 1 2 3 4 5 0 –30 6 Fixed output voltage (V) 0 25 50 75 85 Ambient temperature (˚C) Fixed-output voltage temperature characteristic Standby current vs. ambient temperature 1.15 Detection voltage (V) VREL 1.10 VDET 1.05 1.00 0.
S1F76300 Series Output Voltage (V) Output Voltage (V) 2.5 2.0 2.5 2.0 1.5 –30 0 25 50 75 –30 85 0 25 50 75 85 Ambient temperature (˚C) Ambient temperature (˚C) Output voltage vs. ambient temperature (S1F76380M1H0) Output voltage vs. ambient temperature (S1F76380M1L0) S1F76310M1B0, S1F76310M1K0 60 50 40 30 20 10 0.5 1.0 1.5 2.0 VI1 = 1.5 V 50 S1F76300 Series Ta = 25 ˚C Clock frequency (kHz) Clock frequency (kHz) 60 40 30 20 10 –30 2.
S1F76300 Series Load Characteristics S1F76310M1A0 10 Maximum load current (mA) Ta = 25 ˚C fCLK = 32 kHz Output voltage (V) 5.0 4.5 VI1 = 1.5 V VI1 = 1.0 V VI1 = 1.25 V 4.0 3.5 3.0 2.5 0 5 100 Ta = 25 ˚C fCLK = 32 kHz Peff ILmax 0 100 10 50 5 Load efficiency (%) 5.5 0 200 Load current (mA) 300 500 1000 Inductence (µH) Notes Inductor: TDK NLF453232-221k (220µH) Diode: Shindengen DINS4 Schottky barrier diode Capacitor: NEC MSUB20J106M (10µF) Notes 1. VI1 = 1.5V 2.
S1F76300 Series S1F76380M1L0 4.0 15 3.0 2.5 2.0 VI = 1.0 VV = 1.25 VV = 1.5 V 1.5 1.0 Ta = 25 ˚C fCLK = 40 kHz ILmax 10 Peff 50 5 0 0 10 5 15 20 25 100 200 300 500 1000 0 Inductance (µH) Load current (mA) Notes Inductor: TDK NLF453232-221k (220µH) Diode: Shindengen DINS4 Schottky barrier diode Capacitor: NEC MSUB20J106M (10µF) 100 Notes 1. VI1 = 1.5V 2.
S1F76300 Series Reset delays S1F76310M1A0 S1F76310M1K0 200 150 150 tpd (msec) tpd (msec) R = 200 kΩ 200 100 R = 200 kΩ 100 50 50 R = 100 kΩ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 R = 100 kΩ 0 0.1 1.0 0.2 C (µF) 0.3 0.4 0.5 0.6 0.7 0.8 1.0 C (µF) S1F76310M1B0 S1F76310M1L0 and S1F76380M1L0 200 200 R = 200 kΩ R = 200 kΩ 150 tpd (msec) tpd (msec) 150 100 100 50 50 R = 100 kΩ R = 100 kΩ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 1.0 C (µF) 0.2 0.3 0.4 0.5 0.6 0.7 0.
S1F76300 Series Timing diagram Measurement circuit VO VO VI1 R 100 kΩ PWCR RST C PWCR RST tpd PACKAGE MARKINGS 7631 S1F76300 Series S1F76310, S1F76380 series device packages use the following markings. Series number First subcode character Second subcode character Code number FUNCTIONAL DESCRIPTIONS Basic Voltage Booster Operation Tr1 switches ON and OFF at half the frequency of the clock pulses from the built-in RC oscillator. When the transistor is ON, the circuit stores energy in L.
S1F76300 Series Reference voltage generator and output voltage regulator S1F76310M The reference voltage generator regulates VI1 to generate a votlage for the voltage regulator and voltage detection circuits. The voltage regulator regulates the boosted output votlage. This is determined by the level at point A between the two resistors connecting VO and GND. These series use an on-chip resistor to set the output at a specified voltage.
S1F76300 Series In standby mode, the booster, including the crystal oscillator, is disabled (the switching transistor used to drive the inductor is turned OFF) and the built-in backup switch is turned ON, so that the input voltage at VI2 is output at VO. This enables the battery backup function. PS is pulled-up internally, so when standby mode is not required, the pin should be left open. VO circuit PWCR VI1 circuit VI1 RST Powering up The S1F76380 series are provided with a response compensation input.
S1F76300 Series Notes ■ 100µH ≤ L ≤ 1mH, C ≤ 10µF, D = Schottky diode ■ S1F76310M1A0 • Peff = 70% when L = 220µH (leadless inductor), VI1 = 1.5V, fCLK = 32kHz, IO = 4mA • Peff = 75% when L = 220µH (drum coil), VI1 = 1.5V, fCLK = 32kHz, IO = 6mA • Peff = 80% when L = 300µH (toroidal coil), VI1 = 1.5V, fCLK = 32kHz, IO = 7mA ■ S1F76310M1B0 • Peff = 70% when L = 220µH (leadless inductor), VI1 = 1.5V, fCLK = 32kHz, IO = 8mA • Peff = 75% when L = 220µH (drum coil), VI1 =1.
S1F76300 Series Sample External Components Leadless Inductors TDK NKF453232 series magnetically shielded leadless inductors Inductance ( µH) NLF453232-390K 39.0 ±10% NLF453232-470K 47.0 ±10% NLF453232-560K 56.0 ±10% NLF453232-680K 68.0 ±10% NLF453232-820K 82.0 ±10% NLF453232-101K 100.0 ±10% NLF453232-121K 120.0 ±10% NLF453232-151K 150.0 ±10% NLF453232-181K 180.0 ±10% NLF453232-221K 220.0 ±10% NLF453232-271K 270.0 ±10% NLF453232-331K 330.0 ±10% NLF453232-391K 390.0 ±10% NLF453232-471K 470.
S1F76300 Series Drum coil inductors Taiyo Yuuden FL series micro-inductors Device FL3H FL4H FL5H FL7H FL9H FL11H Inductance 0.22µH to 10µH 0.47µH to 12µH 10µH to 1mH 680µH to 8.
S1F76300 Series Diodes Shindengen DINS4 Schottky barrier diodes Parameter Symbol Forward voltage VF Reverse current IR Junction-to-lead thermal resistance Junction-to-ambient thermal resistance θjl θja Rating Min. Typ. Max. Condition IF = 1.1A, pulse measurement VR = VRM, pulse measurement Unit — — 0.55 V — — 1 mA — — — — 23 157 ˚C/W ˚C/W Characteristics 5 Tp = 25 ˚C (Typ.) Tp = 25 ˚C (Max.) Tp =125 ˚C (Max.) 1 S1F76300 Series Forward current (A) 2 Tp = 125 ˚C (Typ.) 0.5 0.
S1F76300 Series Other Applications Voltage booster Combining an S1F76310 switching regulator with an S1F76610C/M DC/DC converter and voltage regulator L D + C1 10 µF VSW 1 14 2 13 3 12 VO VI1 VI2 creates the voltage booster circuit shown in the following figure. + C2 10 µF 4 S1F76610C/M 11 S1F76310M GND ROSC 1 MΩ 5 10 6 9 7 8 POFF C1 VO = – 15V PS PWCR VI = –5 V C3 10µF S1F76310M1A0. The input voltage still reaches the S1F76610C/M through L and D.
S1F76300 Series Output voltage adjustment To ensure stable output, any circuit that adjusts the output voltage must contain C1, RA and R B. To stop switching current from affecting VO, the circuit must also satisfy the condition IO < IR. Step-up voltage output RA VSW The following figure summarizes the relevant circuits inside an S1F76300 series chip. VO is connected to the level shift and buffer circuit, which provide the gate bias for the switching transistor driving the inductor.
S1F76300 Series S1F76330 Series Built-in Crystal Oscillator Type CMOS Switching Regulators DESCRIPTION APPLICATIONS The S1F76330 series of CMOS switching regulators provide input voltage step-up and regulation to a specified voltage using an external coil. The devices in these series incorporate precision, low-power reference voltage generators and transistors for driving an internal comparator. They feature low power consumption, low operating voltages and standby operation.
S1F76300 Series BLOCK DIAGRAMS PIN ASSIGNMENTS S1F76330 series S1F76330 series PS CI CO CLO CO 1 VI1 Oscillator Reference voltage generator + – CI 2 VSW GND 3 VO VSW 4 S1F76330 series 8 PS 7 VI1 6 CLO 5 VO Control switch GND PIN DESCRIPTIONS S1F76330 series Name CO CI GND VSW VO CLO VI PS Description Crystal drain Crystal gate Ground External inductor drive Output voltage Oscillator output Step-up input voltage Power save. See note.
S1F76300 Series SPECIFICATIONS Absolute Maximum Ratings S1F76330 series Parameter Symbol VI1 IO VO Input voltage Output current Output voltage Power dissipation PD Rating 7 100 7 200 (SOP) 300 (DIP) –30 to +85 –65 to +150 260 Unit V mA V mW Operating temperature range Topr Storage temperature range Tstg Solding temperature (for 10 s). See note. Tsol Note Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions.
S1F76300 Series Typical Performance Characteristics Normalized frequency deviation (ppm) 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 50 Normalized frequency deviation = f–fO fO 0 CD = 10 pF –50 6 0 10 Fixed output voltage temperature characteristic Normalized frequency deviation (ppm) VI1 = 1.5 V Standby current (µA) 4 3 2 1 50 75 1.0 85 RD = 0 Ω VI = 1.5 V fO = 96 kHz CG = CD = 10 pF Normalized frequency deviation = ∆f/f 0.
S1F76300 Series Load characteristics S1F76330M1B0 10 fCLK = 32.8 kHz Maximum load current (mA) Output voltage (V) 3.5 3.0 2.5 VI1 = 1.5 V VI1 = 1.25 V VI1 = 1.0 V 2.0 1.5 1.0 100 Ta = 25 ˚C fCLK = 32 kHz Peff 5 50 ILmax 0 0 5 10 15 20 100 25 200 300 500 Load efficiency (%) 4.0 0 1000 Inductance (µH) Load current (mA) Notes Inductor: TDK NLF453232-221k (220µH) Diode: Shindengen DINS4 Schottky barrier diode Capacitor: NEC MSVB20J106M (10µF) Notes 1. VI1 = 1.5V 2.
S1F76300 Series FUNCTIONAL DESCRIPTIONS Basic Voltage Booster Operation Tr1 switches ON and OFF at the frequency of the clock pulses from the crystal oscillator. When the transistor is ON, the circuit stores energy in L. When it is OFF, this energy flows through D to charge C. L D Tr1 VO Crystal Reference voltage generator C GND CD CG Output voltage regulator VI1 GND VSW Internal Circuits Crystal oscillator VO Crystal oscillator The S1F76330 series incorporate a crystal oscillator circuit.
S1F76300 Series Powering up Ensure that VO is at least the minimum operating voltage (0.9V) before switching on the booster circuit. One way to do this is to connect a capacitor between PS and GND so that the chip connects VO to VI when the power is applied for the first time.
S1F76300 Series Diode Use a Schottky barrier diode with a high switching speed and low forward voltage drop, VF. Capacitor To minimize ripple voltages, use capacitors with a small equivalent direct-current resistance for smoothing. Sample External Components Device Inductance ( µH) Qmin NLF453232-390K 39.0 ±10% NLF453232-470K 47.0 ±10% NLF453232-560K 56.0 ±10% NLF453232-680K 68.0 ±10% NLF453232-820K 82.0 ±10% NLF453232-101K 100.0 ±10% NLF453232-121K 120.0 ±10% NLF453232-151K 150.
S1F76300 Series Drum coil inductors Taiyo Yuuden FL series micro inductors Inductance ( µH) 0.22 to 10 0.
S1F76300 Series Diodes Shindengen DINS4 Schottky barrier diodes Parameter Symbol Forward voltage VF Reverse current IR Junction-to-lead thermal resistance Junction-to-ambient thermal resistance θjl θja Conditions IF = 1.1A, pulse measurement VR = VRM, pulse measurement Rating Min. Typ. Max. Unit — — 0.55 V — — 1 mA — — — — 23 157 ˚C/W ˚C/W Characteristics 5 Tp = 125 ˚C (Typ.) Tp = 25 ˚C (Max.) 1 Tp = 125 ˚C (Max.) S1F76300 Series Forward current (A) 2 Tp = 25 ˚C (Typ.) 0.
S1F76300 Series Other Applications Voltage booster Combining an S1F76330M1B0 switching regulator with an S1F76610C/M DC/DC converter and voltage L regulator creates the voltage booster circuit shown in the following figure. D + C1 10 µF VSW 1 14 2 13 3 12 VO VI1 + C2 10 µF S1F76330M GND ROSC 1 MΩ 4 S1F76610C/M 11 5 10 6 9 7 8 POFF C VO = –15 V PS CG RD VI = –5 V Potential levels are shown in the following figure.
S1F76300 Series Output voltage adjustment To ensure stable output, any circuit that adjusts the output voltage must contain C1, RA and R B. To stop switching current from affecting VO, the circuit must also satisfy the condition IO < IR. RA VSW VI Step-up voltage output VO The following figure summarizes the relevant circuits inside an S1F70000 series chip. VO is connected to the level shift and buffer circuit, which provide the gate bias for the switching transistor driving the inductor.
S1F71100 Series S1F71100 Series PWM Type Step-down DC/DC Switching Regulator DESCRIPTION FEATURES S1F71100 is a pulse width modulation (PWM) type step-down DC/DC converter control IC for which the CMOS process is used and to which a power transistor is connected outside. S1F71100 is composed of an oscillator, a reference voltage circuit, an error amplifier, a PWM circuit, a soft start circuit, a driver, etc.
S1F71100 Series PIN ASSIGNMENTS Top View SSCAP 1 POFFX 2 VDD ISENSE 8 VSS 7 VO 3 6 ERCAP 4 5 SWO Index SOP4-8pin Pin No. Pin name Pin Type 1 SSCAP — S1F71100 Series PIN DESCRIPTIONS Description The soft start function is obtained when a capacitor is connected between the capacitor connection pin for setting soft start and the VSS pin.
S1F71100 Series FUNCTIONAL DESCRIPTIONS Description of Operation S1F71100 is a step-down switching regulator control IC of load current detection type pulse width modulation (PWM) system and is composed of an oscillator, a reference voltage circuit, an error amplifier, a PWM circuit, various protection circuits, etc. S1F71100 can constitute a switching regulator, which converters input voltages up to 12V into output voltages of 3.
S1F71100 Series Power Off Function S1F71100 can control circuit operations according to external signal control. When the POFFX pin is connected to the VSS level, all circuits stop their operations and their powers are turned off. The current consumption at the power off state is less than 1µA. When the power is off, the SWO pin is at the VDD level and turns off the voltage transistor.
S1F71100 Series ELECTRICAL CHARACTERISTICS DC Characteristics (S1F71100M0A0) Unless otherwise specified, Ta = 25˚C. Parameter Symbol Conditions Specification Min. Typ. Unit Max. Input supply voltage VDD — 3.3 — 12.0 V Output voltage VO VDD=5.0V 3.150 3.3 3.450 V 0.8 1.4 mA — 1.0 µA Ta=–30 to +85˚C Current consumption IV DD during operation Current consumption VDD=5.0V V O=VDD IOPR1 at power off time VDD=5.0V — POFFX=VSS Output current IOHSWO VDD=5.0V,VOH=50mV –1.
S1F71100 Series EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT Example of Standard Circuit VDD VDD CIN2 Low-voltage Overcurrent protection circuit protection circuit + CIN1 POFFX Load current detection resistor R – – + Reference voltage circuit ISENSE SSCAP ERCAP ERCAP phase compensation Soft start Oscillator Driver Pch MOSTr L VO + PWM circuit SWO VO 3.3V – Error amplifier VSS D CVOUT Parts examples CIN1 CIN2 SSCAP ERCAP R PchTr L CVO D 100µF 1µF 0.
S1F71100 Series MECHANICAL DATA Plastic SOP4-8pin Reference D INDEX HE 5 E 8 θ 1 4 θ2 e b A1 A2 A R1 R C Lead type STD (SOP4–8pin STD) Symbol Dimension in Milimeters Min. Nom. Max. E 4.8 5 5.2 D1 A 1.75 A1 0.15 A2 1.6 e 1.27 b 0.25 0.35 0.45 C 0.05 0.15 0.25 θ L 0.55 L1 L2 HE 6.4 6.8 7.2 D 4.8 5 5.2 θ2 θ3 R R1 * for reference 4–40 L2 θ3 EPSON L L1 Min. (0.189) (0.010) (0.002) Dimension in Inches* Nom. Max. (0.197) (0.204) (0.069) (0.006) (0.063) (0.05) (0.014) (0.006) (0.017) (0.
S1F71200 Series DESCRIPTION FEATURES S1F71200 is a step-up/step-down DC/DC converter control IC for which the CMOS process is used and to which a power transistor is connected outside. S1F71200 is composed of an oscillator, a reference voltage circuit, an error amplifier, a PWM circuit, a series regulator, a driver, etc.
S1F71200 Series BLOCK DIAGRAM Driver Oscillator SWO Overcurrent detection circuit _ VDD1 ISENSE + PWM VDD2 Soft start _ SSC VSS EXO + Series regulator VSW VO + SRC _ Error amplifier IREF SWC Reference voltage circuit VC POFFX VREF 4–42 EPSON S1F70000 Series Technical Manual
S1F71200 Series PIN ASSIGNMENTS 1 Index 15 3 14 4 13 5 12 6 11 7 10 8 9 S1F71200 Series 2 16 SSOP2–16pin S1F70000 Series Technical Manual EPSON 4–43
S1F71200 Series PIN DESCRIPTIONS Pin No. Pin name Pin type Power system Description 1 VDD1 Power supply VDD1 Power pin 1 (+), Input power pin 2 VDD2 Power supply VDD2 Power pin 2 (+), Power pin for series regulator circuit 3 EXO Output VDD2 PNP transistor base drive pin for series regulator 4 VO — — Step-up/step-down output feedback pin 5 SRC — — Series regulator phase compensation capacitor connection pin 6 IREF Output VDD1 Reference resistor connection pin.
S1F71200 Series FUNCTIONAL DESCRIPTIONS Operation of Switching Regulator S1F71200 monitors voltage at the VSW pin, i.e., the output voltage of the step-up switching regulator, and controls pulse width of the switching transistor. When the voltage at the VSW pin drops below the step-up set voltage, S1F71200 changes the output level of the error amplifier and increases the on duty of the switching transistor for control.
S1F71200 Series Overcurrent Protection Circuit The overcurrent protection circuit functions when an overcurrent flows through the current detection resistor during the step-up operation and the voltage at the ISENSE pin rises over the set voltage value. When the overcurrent protection function works, the transistor drive pin SWO comes to the VSS level and the switching transistor is turned off.
S1F71200 Series Parameter Symbol Applicable Pin Rating Unit Input voltage VDD VDD1 VDD2 15.0 V Voltage at EXO pin EXO EXO VSS – 0.3 to VDD2 + 0.3 V VO VO VSS – 0.3 to 15 V Voltage at SRC pin SRC SRC VSS – 0.3 to 15 V Voltage at IREF pin IREF IREF VSS – 0.3 to VDD1 + 0.3 V Voltage at VREF pin VREF VREF VSS – 0.3 to VDD1 + 0.3 V POFFX POFFX VSS – 0.3 to VDD1 + 0.3 V VC VC VSS – 0.3 to VDD1 + 0.3 V Voltage at SWC pin SWC SWC VSS – 0.
S1F71200 Series ELECTRICAL CHARACTERISTICS S1F71200M0A0 (Output : 5.0V) DC Characteristics Parameter Symbol Unless otherwise specified, Ta = 25°C. Rating Conditions Unit Min. Typ. Max. Input supply voltage 1 V DD1 V DD1 pin 2.5 — 12.0 V Input supply voltage 2 V DD2 V DD2 pin — — 12.0 V Step-up set voltage V SW V SW1 pin, VC = VDD1 — 6.0 — — 5.5 — Output voltage VO 4.8 5.0 5.
S1F71200 Series DC Characteristics Parameter Unless otherwise specified, Ta = 25°C. Symbol Rating Conditions Unit Min. Typ. Max. Input pin leak current ILINH VIN = VDD1 — — 1.0 µA at POFFX pin, at VC pin ILINL VIN = VSS — — –1.0 µA Step-up soft start time TSS SSCAP = 0.1µF VDD1 = 3.0V, VC = VDD1 — 100 — ms* — 85 — %* Step-up portion conversion efficiency EFFI VDD1 = 3.3V, VC = VSS Oscillation frequency fOSC VDD1 = 3V (Measure it at the SWO pin.
S1F71200 Series S1F71200M0B0 (Output : 3.3V) DC Characteristics Parameter Symbol Unless otherwise specified, Ta = 25°C. Rating Conditions Unit Min. Typ. Max. Input supply voltage 1 VDD1 V DD1 pin 2.5 — 12.0 V Input supply voltage 2 VDD2 V DD2 pin — — 12.0 V Step-up set voltage VSW V SW1 pin, VC = VDD1 VC = VSS — — 4.3 3.8 — — V Output voltage VO V DD2 = 4.3V Ta = –30°C to +85°C 3.15 3.3 3.45 V Operating time IVDD1-1 V DD1 = 3V, VDD2 = 4.
S1F71200 Series DC Characteristics Parameter Unless otherwise specified, Ta = 25°C. Symbol Rating Conditions Unit Min. Typ. Max. Input pin leak current ILINH VIN = VDD1 — — 1.0 µA at POFFX pin, at VC pin ILINL VIN = VSS — — –1.0 µA TSS SSCAP = 0.1µF VDD1 = 3.0V, VC = VDD1 — 70 — ms* — 85 — %* Step-up soft start time Step-up portion conversion efficiency EFFI VDD1 = 3V, VC = VSS Oscillation frequency fOSC VDD = 3V (Measure it at the SWO pin.
S1F71200 Series EXAMPLE OF EXTERNAL CONNECTION OF REFERENCE CIRCUIT Basic Circuit Driver SWO Oscillator Input voltage VDD1 Overcurrent detection _ circuit ISENSE + PWM VDD2 SSC Soft start _ EXO Output voltage VSS VO Series regulator + VSW + SRC SWC _ Error amplifier VC IREF Reference voltage circuit POFFX VREF 4–52 EPSON S1F70000 Series Technical Manual
S1F71200 Series Example of Parts Connection D CVSW S1F71200 Nch MOSTr L SWO Input voltage VDD1 ISENSE CVDD1 RSENSE VDD2 VBAT SSC PNPTr EXO Output voltage VO CVOUT CSSC VSS VSW S1F71200 Series AC/DC SWC SRC VC IREF RIREF POFFX VREF CVREF CVDD1 NchTr L D CVSW PNPTr CVOUT RIREF CVREF CSSC RSENSE 47µF 47µH Schottky 47µF 22µF 100kΩ 0.1µF 0.1µF 0.
S1F71200 Series MECHANICAL DATA Plastic SSOP2-16pin Reference D D1 9 E INDEX HE 16 θ 8 θ2 R1 R C e b A1 A2 A 1 θ3 L2 L L1 Lead type STD (SSOP2-16pin STD) Symbol E D1 A A1 A2 e b C θ L L1 L2 HE D θ2 θ3 R R1 Min. 4.2 6.4 1.4 0.26 0.1 0° 0.3 5.9 Dimension in Milimeters Nom. Max. 4.4 4.6 6.6 6.8 1.7 0.05 1.5 1.6 0.8 0.36 0.46 0.15 0.25 10° 0.5 0.7 0.9 0.4 6.2 6.5 7 Min. (0.166) (0.252) (0.056) (0.011) (0.004) (0°) (0.012) (0.233) Dimension in Inches* Nom. Max. (0.173) (0.181) (0.
5.
S1F77200Y Series S1F77200Y Series CMOS Voltage Detectors FEATURES The S1F77200Y series products are non-adjusting voltage detectors being developed utilizing he base of the CMOS silicon gate process. This voltage detector consists of the reference voltage circuit, voltage comparator, hysteresis circuit and output circuit, all operating on smaller current. A voltage range to be detected is internally set on respective detectors.
S1F77200Y Series LINEUP Table 5-1 Product Voltage detectable Output type Output phase Min. Typ. Max. Less than VDET VDET or above S1F77210Y1C0 2.10 2.15 2.20 CMOS Low level High level S1F77210Y1P0 2.20 2.25 2.30 CMOS Low level High level S1F77210Y1S0 2.30 2.35 2.40 CMOS Low level High level S1F77210Y1E0 2.50 2.55 2.60 CMOS Low level High level S1F77210Y1F0 2.60 2.65 2.70 CMOS Low level High level S1F77210Y1R0 2.73 2.80 2.
S1F77200Y Series BLOCK DIAGRAM S1F77200Y1*0 Type S1F77200Y2*0 Type VDD (2pin) VDD (2pin) + T — T T + — T OUT (1pin) OUT (1pin) VREF VREF VSS (3pin) VSS (3pin) S1F77210Y1*0 Type S1F77210Y2*0 Type VDD (2pin) VDD (2pin) + T — T OUT (1pin) T T + — OUT (1pin) + OUT (1pin) VREF VREF VSS (3pin) VSS (3pin) S1F77220Y1*0 Type VDD (2pin) VDD (2pin) + T — T T OUT (1pin) — T VREF VREF VSS (3pin) VSS (3pin) Note: A different code can be employed for the ones preceded by * marki
S1F77200Y Series PIN DESCRIPTIONS Pin No. Pin name Description 1 OUT Voltage detection output pin 2 VDD Input voltage pin (positive side) 3 VSS Input voltage pin (negative side) PIN ASSIGNMENTS SOT89-3pin 1 2 3 FUNCTIONAL DESCRIPTIONS The S1F77200Y series has the circuit configuration as shown in the figure below.
S1F77200Y Series The following figures show the input and output characteristics of the S1F77200Y series.
S1F77200Y Series ELECTRIC CHARACTERISTICS S1F77210Y1C0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 1.50 — 12.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 2.10 2.15 2.20 V Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics VDD = 3.
S1F77200Y Series S1F77210Y1S0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Conditions (VSS = 0.0V) Min. — 12.0 V Ta = 25°C 2.30 2.35 2.40 V VHYS = VREL – VDET 0.05 0.10 0.15 V — 2.00 5.00 µA VDD = 3.0V ∆VDET VDET –300 –100 +100 IOH VDD = 3.0V OUT = 2.7V — Low level output current IOL VDD = 2.
S1F77200Y Series S1F77210Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 1.50 — 12.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 2.60 2.65 2.70 V Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics VDD = 3.0V ∆VDET VDET –300 –100 +100 High level output current IOH VDD = 3.0V OUT = 2.
S1F77200Y Series S1F77210Y1G0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Conditions (VSS = 0.0V) Min. — 12.0 V Ta = 25°C 2.93 3.00 3.07 V VHYS = VREL – VDET 0.09 0.15 0.21 V — 2.00 5.00 µA VDD = 4.0V ∆VDET VDET –300 –100 +100 IOH VDD = 4.0V OUT = 3.6V — Low level output current IOL VDD = 2.
S1F77200Y Series S1F77210Y130 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 1.50 — 12.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 3.43 3.50 3.57 V Hysteresis width VHYS VHYS = VREL – VDET 0.09 0.15 0.21 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics VDD = 4.0V ∆VDET VDET –300 –100 +100 High level output current IOH VDD = 4.0V OUT = 3.
S1F77200Y Series S1F77210Y1M0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Conditions (VSS = 0.0V) Min. — 12.0 V Ta = 25°C 4.10 4.20 4.30 V VHYS = VREL – VDET 0.13 0.20 0.27 V — 2.00 5.00 µA VDD = 5.0V ∆VDET VDET –300 –100 +100 IOH VDD = 5.0V OUT = 4.5V — Low level output current IOL VDD = 2.
S1F77200Y Series S1F77210Y120 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 1.50 — 12.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 4.50 4.60 4.70 V Hysteresis width VHYS VHYS = VREL – VDET 0.08 0.15 0.22 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics VDD = 5.0V ∆VDET VDET –300 –100 +100 High level output current IOH VDD = 5.0V OUT = 4.
S1F77200Y Series S1F77210Y1L0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Conditions (VSS = 0.0V) Min. — 12.0 V Ta = 25°C 4.90 5.00 5.10 V VHYS = VREL – VDET 0.13 0.20 0.27 V — 2.00 5.00 µA VDD = 6.0V ∆VDET VDET –300 –100 +100 IOH VDD = 6.0V OUT = 5.4V — Low level output current IOL VDD = 2.
S1F77200Y Series S1F77210Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 1.50 — 12.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 2.60 2.65 2.70 V Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics VDD = 3.0V ∆VDET VDET –300 –100 +100 High level output current IOH VDD = 2.0V OUT = 1.
S1F77200Y Series S1F77200Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Low level output current Detection voltage response time Conditions (VSS = 0.0V) TPHL Typ. Max. Unit 1.50 — 12.0 V Ta = 25°C 2.60 2.65 2.70 V VHYS = VREL – VDET 0.05 0.10 0.15 V — 2.00 5.00 µA VDD = 3.0V ∆VDET VDET IOL Min.
S1F77200Y Series S1F77200Y1N0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 0.80 — 10.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 1.85 1.90 1.95 V Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V Operating current IDD — 2.00 5.00 µA Detection voltage temperature characteristics Low level output current Detection voltage response time VDD = 3.
S1F77200Y Series S1F77200Y1Y0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Operating voltage VDD Detection voltage VDET Hysteresis width VHYS Operating current IDD Detection voltage temperature characteristics Low level output current Detection voltage response time Conditions (VSS = 0.0V) TPHL Typ. Max. Unit 0.80 — 10.0 V Ta = 25°C 1.05 1.10 1.15 V VHYS = VREL – VDET 0.03 0.05 0.08 V — 1.50 4.00 µA VDD = 1.5V ∆VDET VDET IOL Min.
S1F77200Y Series S1F77200Y1V0 (Ta = –30°C to +85°C is assumed except where otherwise specified.) Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit 0.80 — 10.0 V Operating voltage VDD Detection voltage VDET Ta = 25°C 0.90 0.95 1.00 V Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V Operating current IDD — 1.50 4.00 µA Detection voltage temperature characteristics Low level output current Detection voltage response time VDD = 1.
S1F77200Y Series EXAMPLES OF EXTERNAL CONNECTION Input voltage (+) (2pin) VDD (1pin) S1F77210Y OUT Series Voltage detection output VSS (3pin) Input voltage (—) Power supply for pull up resistor Input voltage (+) (2pin) VDD S1F77210Y OUT Series (1pin) Voltage detection output VSS (3pin) Input voltage (—) Input voltage (+) (2pin) VDD (1pin) S1F77210Y OUT Series Voltage detection output S1F77200Y Series VSS (3pin) Input voltage (—) Power supply for pull down resistor S1F70000 Series Technica
S1F77200Y Series SAMPLE CIRCUITS (S1F77210Y Series) CR timer circuit When the S1F77210Y circuit configured as shown in Figure 5-14, it can be used as a CR timer circuit. VDD R VDD S1F77210Y VO OUT C VSS Figure 5-14 CR timer circuit Battery backup circuit The following is an example of the supply voltage switching circuit for the battery backup supply configured featuring the S1F77210Y series.
S1F77200Y Series SAMPLE CIRCUITS (S1F77200Y Series) CR timer circuit When the S1F77200Y circuit is configured as shown in Figure 5-16, it can be used as a CR timer circuit. VDD VDD R VDD S1F77200Y OUT VO C VSS Figure 5-16 CR timer circuit Battery backup circuit The following is an example of the supply voltage switching circuit for the battery backup configured featuring the S1F77200Y series.
S1F77200Y Series PRECAUTIONS Short cut current on the S1F77210 (CMOS output voltage detector) Since the S1F77200Y series employs CMOS output, as an input voltage nears the detection voltage range, short cut current is flown between VDD and VSS. The short cut current is voltage sensitive, and approximately 2 mA flows at 5V level or so (our products are not check for short cut current after volume production has been started).
6.
Appendix ABSOLUTE MAXIMUM RATINGS POWER DISSIPATION CONDITIONS Absolute maximum ratings are the maximum physical and electrical ratings of a device beyond which performance degradation or damage will occur. Always check circuit conditions before using a device to avoid exceeding these ratings. Typically, absolute maximum ratings include the following parameters. To prevent damage always consider the following points when designing with power regulation ICs. 1.
Appendix The following figure shows a thermal design model which can be used to determine heatsink capacity. Junction temperature Tj θjc Case temperature Tc Heat source 2. Ensure that the regulator common pin is a single-point ground to prevent earth loops. Make ground lines as thick and short as possible. Use the specified bypass capacitors for inputs and outputs.
Appendix Symbol Parameter Symbol Parameter Memory reset VI Input voltage Topr Operating temperature VIH High-level input voltage t PAE Propagation delay VIL Low-level input voltage tPHL Low-level transition time VI Input voltage tPLH High-level transition time VO Output voltage tPLS Propagation delay Voff Input offset voltage tPOP Propagation delay Vop+ Input voltage range t PS Propagation delay VOPMAX Maximum output voltage t SA Address setup time VOPMIN Minimum outpu
Appendix MECHANICAL DATA Plastic DIP–8pin Plastic DIP–14pin 9.7Max. 19.7Max. 9.1±0.1 19.0±0.1 8 5 14 6.3±0.1 6.4±0.1 INDEX 1 8 4 1 7.62 7 3.0Min. 4.4±0.1 0.8±0.1 3.0Min. 4.4±0.1 0.8±0.1 1.3 +0.03 0.46±0.1 0.25 –0.01 2.54 +0.03 0.46±0.1 ±0.25 0.25 –0.01 2.54 ±0.25 7.62 1.5 7.62 to 9.02 7.62 to 9.02 Unit: mm Plastic QFP5–48pin Unit: mm Plastic QFP12-48pin 19.6±0.4 14±0.1 9.0±0.4 7.0±0.1 36 48 0.35±0.1 37 24 20±0.1 INDEX 25 7.0±0.1 9.0±0.4 1 0.
Appendix Plastic SOP5–14pin SOT 89–3pin 4.5±0.1 1.8Max. 0.44Max. 0.4 10.5Max. 10.2±0.2 0.8 1 1 7 2 3 1.5 1.5 Min. 8.0±0.3 INDEX 2.5±0.1 4.25Max. 8 5.5±0.2 14 0.44Max. 0.4±0.1 1.5±0.1 2.3 0.15±0.1 0.4 0.48Max. 0.48Max. 0.53Max. Unit: mm Plastic SOP2–28pin 15.5Max. 18.1Max. 15.2±0.1 17.8±0.1 1 14 8.4±0.1 2.5±0.15 2.7 0.4±0.1 0.2 0.15±0.05 1.0 1.27 0.4±0.1 Unit: mm Plastic SSOP2–16pin Plastic SSOP1–20pin 6.5±0.1 20 1 1.2Max. 1.5 1.7Max. 0° 10° 0.5±0.2 0.65 0.
Appendix EMBOSS CARRIER TAPING STANDARD (SOT89-3pin) TAPING INFORMATION The emboss carrier taping standard is shown in the following table and figure. This standard conforms to the EIAJ RCI00B electronic parts taping specification. Each tape holds 1,000 devices. Dimension code Dimensions/angles (mm/°) Dimension code Dimensions/angles (mm/°) A 5.0 P2 2.0 ±0.05 B 4.6 T 0.3 D 1.5 +0.1, –0.05 T2 2.3 E 1.50 ±0.1 W 12.0 ±0.2 F 5.65 ±0.05 W1 9.5 P1 8.0 ±0.1 θ 30°Max. P0 4.0 ±0.
Appendix REEL SPECIFICATIONS The reel specifications are shown in the following table and figure. The reel is made of paperboard. Dimension code Dimensions (mm) A 178 ±2.0 B 80 ±1.0 C 13.0 ±0.5 D 21.0 ±1.0 E 2.0 ±0.5 W 14.0 (See note.) W1 1.5 ±0.1 W2 17 (See note.) r 1.0 W2 120˚ 120˚ C E B A D r W W1 Note W and W2 are measured at the reel core.
Appendix EMBOSS CARRIER TAPING STANDARD (SOP3-8pin ) TAPING INFORMATION The emboss carrier taping standard is shown in the following table and figure. This standard conforms to the EIAJ RCI009B electronic parts taping specification. Each tape holds 2,000 devices. Dimension code Dimensions/angles (mm/°) Dimension code Dimensions/angles (mm/°) A 6.7 P2 2.0 ±0.05 B 5.4 T 0.3 ±0.05 D 1.55 +0.05, –0 T2 2.5 D1 1.55 ±0.05 W 12.0 ±0.3 E 1.75 ±0.1 W1 9.5 F 5.5 ±0.1 θ 15°Max. P1 8.
Appendix REEL SPECIFICATIONS W2 The reel specifications are shown in the following table and figure. The reel is made of paperboard. Dimension code Dimensions (mm) A 330 ±2.0 B 80 ±1.0 C 13.0 ±0.5 D 21.0 ±0.5 E 2.0 ±0.5 W 15.4 ±1.0 (See note.) W1 2.0 ±0.5 W2 23.4 (See note.) r 1.0 120˚ 120˚ C E B A D r W W1 Note W and W2 are measured at the reel core.
Appendix Type F product are positioned so that the index mark is on the opposite side to the sprocket holes, as shown in the following figure.
Appendix EMBOSS CARRIER TAPING STANDARD (SOP5-14pin ) TAPING INFORMATION The emboss carrier taping standard is shown in the following table and figure. This standard conforms to the EIAJ RCI009B electronic parts taping specification. Each tape holds 2,000 devices. Dimension code Dimensions (mm/ °) Dimension code Dimensions (mm/°) A 8.4 P2 2.0 ±0.1 B 10.6 T 0.3 ±0.05 D0 1.55 ±0.05 T2 3.0 D1 1.55 ±0.05 W 16.0 ±0.3 E 1.75 ±0.1 W1 13.5 F 7.5 ±0.1 P1 12 ±0.1 P0 4.0 ±0.
Appendix REEL SPECIFICATIONS The reel specifications are shown in the following table and figure. The reel is made of paperboard. Dimension code Dimensions (mm) A 330 ±2.0 B 80 ±1.0 C 13.0 ±0.5 D 21.0 ±1.0 E 2.0 ±0.5 W 14.0 ±1.5 (See note.) W1 2.0 ±0.5 W2 20.5 max (See note.) r 1.0 W2 120˚ 120˚ C E B A r D W W1 Note W and W2 are measured at the reel core.
Appendix Type F products are positioned so that the index mark is on the opposite side to the sprocket holes, as shown in the following figure.
Appendix EMBOSS CARRIER TAPING STANDARD (SOP2-24pin ) TAPING INFORMATION The emboss carrier taping standard is shown in the following table and figure. This standard conforms to the EIAJ RCI009B electronic parts taping specification. Each tape holds 1,000 devices. Dimension code Dimensions (mm) Dimension code Dimensions (mm) A 12.4 P0 4.0 ±0.1 B 15.6 P2 2.0 ±0.1 D0 1.55 +0.1, –0 T 0.3 ±0.05 D1 2.0 +0.1, –0 T2 3.0 ±0.1 E 1.75 ±0.1 W 24 ±0.2 F 11.5 ±0.1 W1 21.5 Typ. P1 16 ±0.
Appendix Tape configuration The tape configuration is shown in the following figure. Blank sections are provided as a leader and trailer, with 1,000 SOP2 packages fitted into the component mounting section between them. At the begin- ning of the leader section there is an extra section of tape which contains the cover tape only.
Appendix REEL SPECIFICATIONS The reel specifications are shown in the following table and figure. The reel is made of conductive PVC. Dimension code Dimensions (mm) A 330 ±2.0 B 80 ±1.0 C 13.0 ±0.5 D 21.0 ±1.0 E 2.0 ±0.5 W 24.4 +2, –0 (See note.) W1 2.0 ±0.5 W2 31.4 Max. (See note.) r 1.0 W2 120˚ 120˚ C E B A r D W W1 Note W and W2 are measured at the reel core.
Appendix Type F products are positioned so that the index mark is on the opposite side to the sprocket holes, as shown in the following figure.
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MF302-11 S1F70000 Series Technical Manual IEEE1394 POWER SUPPLY Controller IC S1R77801F00A S1F70000 Series Technical Manual S1F70000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/ This manual was made with recycle paper, and printed using soy-based inks. First issue November,1990 U Revised July,2002 in Japan H B 4.
