Datasheet

©2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
December 2004
1N4149 Rev. A
1N4149 Small Signal Diode
1N4149
Small Signal Diode
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol Parameter Value Unit
V
RRM
Maximum Repetitive Reverse Voltage 100 V
I
F(AV)
Average Rectified Forward Current 500 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
STG
Storage Temperature Range -65 to +200 °C
T
J
Operating Junction Temperature 175 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 500 mW
R
θJA
Thermal Resistance, Junction to Ambient 300 °C/W
Symbol Parameter Conditions Min. Max Units
V
R
Breakdown Voltage I
R
= 5µA
I
R
= 100µA
75
100
V
V
V
F
Forward Voltage I
F
= 10mA 1.0 V
I
R
Reverse Leakage V
R
= 20V
V
R
= 20V, T
A
= 150°C
25
50
nA
µA
C
T
Total Capacitance V
R
= 0, f = 1.0MHz 2 pF
t
rr
Reverse Recovery Time I
F
= 10mA, V
R
= 6.0V
R
L
= 100Ω, I
rr
= 1mA
4ns
DO-35
Color Band Denotes Cathode