Datasheet

1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. B0 1
April 2012
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
Features
• General Purpose Diodes
• Fast Switching Device (T
RR
< 4.0ns)
• Very Small and Thin SMD Package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics T
a
= 25°C unless otherwise noted
Symbol
Parameter Value Units
V
RSM
Non-Repetitive Peak Reverse Voltage 100 V
V
RRM
Repetitive Peak Reverse Voltage 75 V
I
FRM
Repetitive Peak Forward Current 300 mA
I
O
Continuous Forward Current 150 mA
T
J
Operating Junction Temperature +150 °C
T
STG
Storage Temperature Range -55 to +150 °C
Symbol
Parameter Value Units
P
D
Power Dissipation (T
C
= 25°C) 200 mW
R
θJA
Thermal Resistance, Junction to Ambient * 500 °C/W
Symbol
Parameter Test Conditions
Min. Typ. Max.
Units
BV
R
Breakdown Voltage I
R
= 100 μA
I
R
= 5 μA
100
75
V
V
I
R
Reverse Current V
R
= 20 V
V
R
= 75 V
25
5
nA
μA
V
F
Forward Voltage 1N4448WS/914BWS
1N4148WS
1N4448WS/914BWS
I
F
= 5 mA
I
F
= 10 mA
I
F
= 100 mA
0.62 0.72
1
1
V
V
V
C
O
Diode Capacitance V
R
= 0, f = 1 MHz 4 pF
T
RR
Reverse Recovery Time I
F
= 10 mA, I
R
= 60 mA,
I
RR
= 1 mA, R
L
= 100 Ω
4ns
Band Indicates Cathode
1. Cathode
ELECTRICAL SYMBOL
2. Anode
SOD-323 Flat Lead
Device Marking Code
Device Type Device Marking
1N4148WS S1
1N4448WS S2
1N914BWS
S3
2
1